km416rd8as Samsung Semiconductor, Inc., km416rd8as Datasheet - Page 3

• Manufacturer Part Number: km416rd8as
• Description: 128mbit Rdram 256k X 16 Bit X 2*16 Dependent Banks Direct Rdramtm For Consumer Package
• Manufacturer: Samsung Semiconductor, Inc.

KM416RD8AS
1. SAMSUNG Memory
2. Device
3. Organization
4. Product
5. Density
6. Revision
ORDERING INFORMATION
- 4 : DRAM
- 16 : x16 bit
- 18 : x18 bit
- RD : Direct RAMBUS DRAM
- 2 : 2M
- 4 : 4M
- 8 : 8M
- 16 : 16M
- Blank : 1st Gen.
- A
SAMSUNG Memory
Device
Organization
Product
Density
: 2nd Gen.
KM 4 XX XX XX X X - X X XX
1
2
3
4
10. Speed
7. Package Type
8. Power & Refresh
9. t
- C : u - BGA(CSP-Forward)
- D : u - BGA(CSP-Reverse)
- W : WL - CSP
- S : u-BGA For Consumer Package
- Blank : Normal Power Self Refesh(32m/8K, 3.9us)
- L
- R
- S
- Blank : for Daisy Chain Sample
- M
- K
- G
- B~D, F, J, L, N~ : Reserved
- DS : for Daisy Chain Sample
- 80 : 800Mbps (400MHz)
- 70 : 711Mbps (356MHz)
- 60 : 600Mbps (300MHz)
5
RAC
6
(Row Access Time)
: Normal Power Self Refesh(32m/16K, 1.9us)
: Low Power Self Refesh(32m/8K, 3.9us)
7
: Low Power Self Refesh(32m/16K, 1.9us)
: 40ns
: 45ns
: 53.3ns
8
9
10
t
RAC
(Row Access Time)
Rev. 0.9 July 1999
Target
Direct RDRAM
Power & Refresh
Package Type
Revision
Speed
™