km416rd8as Samsung Semiconductor, Inc., km416rd8as Datasheet - Page 58

• Manufacturer Part Number: km416rd8as
• Description: 128mbit Rdram 256k X 16 Bit X 2*16 Dependent Banks Direct Rdramtm For Consumer Package
• Manufacturer: Samsung Semiconductor, Inc.

KM416RD8AS
Absolute Maximum Ratings
I
a. The CMOS interface consumes power in all power states.
b. This does not include the IOL sink current. The RDRAM dissipates IOL • VOL in each output driver when a logic one is driven.
DD
Symbol
V
V
T
I
I
I
I
I
I
IDD,ATTN-W
IDD,ATTN-R
DD,PDN
DD,PDN,L
DD,NAP
DD,STBY
DD,ATTN
DD
STORE
I,ABS
DD,ABS
value
- Supply Current Profile
, V
DDA,ABS
RDRAM blocks consuming power @ t
Self-refresh only for INIT.LSR=0
Self-refresh only for INIT.LSR= 1
T/RCLK-Nap
T/RCLK, ROW-demux
T/RCLK, ROW-demux, COL-demux
T/RCLK, ROW-demux,COL-demux,DQ-demux,1 WR-SenseAmp,4 ACT-Bank
T/RCLK, ROW-demux,COL-demux,DQ-mux,1 RD-SenseAmp,4 ACT-Bank
Parameter
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
Table 23: Absolute Maximum Ratings
Table 24: Supply Current Profile
CYCLE
Page 55
=2.5ns
a
b
Min
- 0.3
- 0.5
- 50
Target
Direct RDRAM
Rev. 0.9 July 1999
Min
TBD
TBD
TBD
TBD
TBD
TBD
TBD
V
V
Max
DD
DD
100
+0.3
+1.0
Max
300
120
180
575
490
4.0
6.0
Unit
V
V
C
Unit
mA
mA
mA
mA
mA
mA
A
™