km416rd8as Samsung Semiconductor, Inc., km416rd8as Datasheet - Page 37

• Manufacturer Part Number: km416rd8as
• Description: 128mbit Rdram 256k X 16 Bit X 2*16 Dependent Banks Direct Rdramtm For Consumer Package
• Manufacturer: Samsung Semiconductor, Inc.

KM416RD8AS
Read/write register.
Reset value is zero (from SETR/CLRR).
Refresh Bank register.
REFB3..REFB0 is the bank that will be refreshed next
during self-refresh. REFB3..0 is incremented after each
self-refresh activate and precharge operation pair.
Read/write register.
Reset value is zero (SETR/CLRR or SIO Reset).
CCA6..CCA0 - Current Control A. Controls the I
output current for the DQA7..DQA0 pins.
ASYMA0 control the asymmetry of the V
voltage swing about the V
DQA7..0 pins.
15 14 13 12 11 10 9
15 14 13 12 11 10 9
0
0
Control Register: REFB
Control Register: CCA
0
0
0
0
0
0
Figure 32: REFB Register
Figure 33: CCA Register
0
0
0
0
0
0
8
0
8
0
ASYMA
REF
7
0
7
0
reference voltage for the
6
0
6
5
0
5
Address: 041
Address: 043
CCA6..CCA0
4
0
4
3
3
REFB3..REFB0
OL
/V
2
2
OH
1
1
OL
16
16
0
0
Page 34
Read/write register.
Reset value is zero (from SETR/CLRR).
Refresh Row register.
REFR8..REFR0 is the row that will be refreshed next
by the REFP command or by self-refresh. REFR8..0 is
incremented when BR3..0=1111 for the REFA
command. REFR8..0 is incremented when
REFB3..0=1111 for self-refresh.
Read/write register.
Reset value is zero (SETR/CLRR or SIO Reset).
CCB6..CCB0 - Current Control B. Controls the I
output current for the DQB7..DQB0 pins.
ASYMB0 control the asymmetry of the V
voltage swing about the V
DQB7..0 pins.
15 14 13 12 11 10 9
15 14 13 12 11 10 9
0
0
Control Register: REFR
Control Register: CCB
0
0
0
0
0
0
Figure 34: REFR Register
Figure 35: CCB Register
0
0
0
0
0
0
8
8
0
ASYMB
REF
Target
Direct RDRAM
Rev. 0.9 July 1999
7
7
0
reference voltage for the
6
6
REFR8..REFR0
5
5
Address: 042
Address: 044
CCB6..CCB0
4
4
3
3
OL
/V
2
2
OH
1
1
OL
16
16
0
0
™