ADC08D1000DEV NSC [National Semiconductor], ADC08D1000DEV Datasheet - Page 8

• Manufacturer Part Number: ADC08D1000DEV
• Description: High Performance, Low Power, Dual 8-Bit, 1 GSPS A/D Converter
• Manufacturer: NSC [National Semiconductor]

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STATIC CONVERTER CHARACTERISTICS
INL
DNL
V
V
PFSE
NFSE
FS_ADJ
NORMAL MODE (Non DES) DYNAMIC CONVERTER CHARACTERISTICS
FPBW
B.E.R.
ENOB
SINAD
OFF
OFF
Symbol
Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Converter Electrical Characteristics
The following specifications apply after calibration for V
870mV
Non-Extended Control Mode, SDR Mode, R
limits apply for T
Supply Voltage (V
Supply Difference
Voltage on Any Input Pin
Ground Difference
Input Current at Any Pin (Note 3)
Package Input Current (Note 3)
Power Dissipation at T
ESD Susceptibility (Note 4)
Soldering Temperature, Infrared,
standard plated package only)
Storage Temperature
_ADJ
V
|GND - DR GND|
Human Body Model
Machine Model
10 seconds, (Note 5), (Applies to
DR
P-P
- V
, C
A
Integral Non-Linearity (Best fit)
Differential Non-Linearity
Resolution with No Missing
Codes
Offset Error
Input Offset Adjustment Range
Positive Full-Scale Error (Note 9)
Negative Full-Scale Error (Note
9)
Full-Scale Adjustment Range
Full Power Bandwidth
Bit Error Rate
Gain Flatness
Effective Number of Bits
Signal-to-Noise Plus Distortion
Ratio
L
= 10 pF, Differential, a.c. coupled Sinewave Input Clock, f
A
A
= T
, V
Parameter
DR
MIN
A
)
≤
to T
85°C
MAX
. All other limits T
−0.15V to (V
−65°C to +150°C
EXT
0V to 100 mV
0V to 100 mV
DC Coupled, 1MHz Sine Wave Over
ranged
DC Coupled, 1MHz Sine Wave Over
ranged
Extended Control Mode
Extended Control Mode
Normal Mode (non DES)
d.c. to 500 MHz
d.c. to 1 GHz
f
f
f
f
f
f
IN
IN
IN
IN
IN
IN
= 3300Ω ±0.1%, Analog Signal Source Impedance = 100Ω Differential. Boldface
= 100 MHz, V
= 248 MHz, V
= 498 MHz, V
= 100 MHz, V
= 248 MHz, V
= 498 MHz, V
A
+0.15V)
±25 mA
±50 mA
A
2500V
235°C
2.0 W
= 25°C, unless otherwise noted. (Notes 6, 7)
250V
2.2V
A
= V
Conditions
DR
IN
IN
IN
IN
IN
IN
= +1.9V
8
= FSR − 0.5 dB
= FSR − 0.5 dB
= FSR − 0.5 dB
= FSR − 0.5 dB
= FSR − 0.5 dB
= FSR − 0.5 dB
Operating Ratings
Soldering
Semiconductor’s Reflow Temperature Profile specifications.
Refer to www.national.com/packaging.
Ambient Temperature Range
Supply Voltage (V
Driver Supply Voltage (V
Analog Input Common Mode Voltage
V
(Maintaining Common Mode)
Ground Difference
CLK Pins Voltage Range
Differential CLK Amplitude
IN
CLK
(|GND - DR GND|)
DC
+, V
Exposed Pad
, OutV = 1.9V, V
= 1 GHz at 0.5V
128-Lead
Package
IN
LQFP
- Voltage Range
process
Package Thermal Resistance
A
)
(Note 8)
Typical
P-P
IN
±0.15
−1.31
-0.45
25°C / W
10
±0.3
−0.6
±0.5
±1.0
46.3
46.3
±45
±20
1.7
7.5
7.4
7.4
47
FSR (a.c. coupled) = differential
must
with 50% duty cycle, V
-18
DR
θ
JA
)
(Notes 1, 2)
comply
(Note 8)
10°C / W
θ
Limits
Package)
JC(Top of
±0.9
±0.6
−1.5
43.9
43.9
±25
±25
±15
0.5
7.0
7.0
8
−40°C
0.4V
with
+1.8V to +2.0V
≤
P-P
V
200mV to V
(Thermal Pad)
BG
2.8°C / W
Error/Sample
T
+1.8V to V
CMO
LSB (max)
LSB (max)
LSB (max)
θ
A
LSB (min)
mV (max)
mV (max)
Bits (min)
Bits (min)
to 2.0V
= Floating,
dB (min)
dB (min)
(Limits)
J-PAD
≤
0V to V
Units
dBFS
dBFS
%FS
GHz
National
±50mV
Bits
Bits
mV
dB
+85°C
0V
P-P
A
A
A