MT46V64M16P-6T IT:A Micron, MT46V64M16P-6T IT:A Datasheet - Page 24

• Manufacturer Part Number: MT46V64M16P-6T IT:A
• Description: DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron

Table 17:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. J; Core DDR Rev. E 7/11 EN
AC Characteristics
Parameter
Access window of DQ from CK/CK#
CK high-level width
Clock cycle time
CK low-level width
DQ and DM input hold time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS–DQ skew, DQS to last DQ valid, per group, per access
WRITE command-to-first DQS latching transition
DQ and DM input setup time relative to DQS
DQS falling edge from CK rising – hold time
DQS falling edge to CK rising – setup time
Half-clock period
Data-out High-Z window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input pulse width (for each input)
Address and control input setup time (fast slew rate)
Address and control input setup time (slow slew rate)
Data-out Low-Z window from CK/CK#
LOAD MODE REGISTER command cycle time
DQ–DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE-to-READ with auto precharge command
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE/AUTO REFRESH command period
ACTIVE-to-READ or WRITE delay
REFRESH-to-REFRESH command interval
Average periodic refresh interval
AUTO REFRESH command period
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
Terminating voltage delay to V
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Electrical Characteristics and Recommended AC Operating Conditions (-75)
Notes: 1–6, 16–18, and 34 apply to the entire table; Notes appear on page 26;
0°C d T
A
d 70°C; V
DD
DDQ
= 2.5V ±0.2V, V
CL = 2.5
CL = 2
1Gb
DD
= 2.5V ±0.2V
24
t
Symbol
t
t
CK (2.5)
t
t
t
t
DQSCK
WPRES
tWPST
t
t
t
t
t
t
t
CK (2)
DQSH
DQSQ
WPRE
DIPW
t
t
t
t
t
t
DQSL
DQSS
t
t
t
t
t
RPRE
tWR
MRD
REFC
RPST
t
t
t
t
DSH
t
t
t
t
QHS
RCD
REFI
RRD
VTD
t
IPW
t
t
RAP
RAS
t
t
t
DSS
t
RFC
DH
IH
IH
QH
AC
CH
HP
HZ
DS
IS
IS
RC
RP
CL
LZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F
S
F
S
Electrical Specifications – DC and AC
t
HP -
t
CH,
–0.75
–0.75
–0.75
Min
0.45
0.45
1.75
0.35
0.35
0.75
0.90
0.90
0.25
120
7.5
0.5
0.5
0.2
0.2
2.2
0.9
0.4
0.4
10
15
20
40
65
20
20
15
15
–
–
1
1
–
–
–
0
0
t
t
QHS
1Gb: x4, x8, x16 DDR SDRAM
CL
-75
120,000
Max
0.75
0.55
0.55
0.75
1.25
0.75
0.75
70.3
0.5
7.8
1.1
0.6
0.6
13
13
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
t
t
t
t
t
t
t
tCK
tCK
tCK
tCK
ns
CK
ns
ns
CK
ns
ns
ns
CK
CK
ns
CK
ns
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
Notes
27, 32
26, 27
27, 32
19, 43
19, 43
26, 27
21, 22
31
46
46
31
32
35
15
15
36
55
24
24
50
44
44
20