MT46V64M16P-6T IT:A Micron, MT46V64M16P-6T IT:A Datasheet - Page 25

• Manufacturer Part Number: MT46V64M16P-6T IT:A
• Description: DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron

Table 17:
Table 18:
Table 19:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. J; Core DDR Rev. E 7/11 EN
AC Characteristics
Parameter
Speed
Speed
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ
command
Exit SELF REFRESH-to-READ command
Data valid output window
-75
-75
-75
-75
-75
-75
Electrical Characteristics and Recommended AC Operating Conditions (-75) (continued)
Notes: 1–6, 16–18, and 34 apply to the entire table; Notes appear on page 26;
0°C d T
Input Slew Rate Derating Values for Addresses and Commands
Note: 15 applies to the entire table; Notes appear on page 26;
0°C d T
Input Slew Rate Derating Values for DQ, DQS, and DM
Note: 32 applies to the entire table; Notes appear on page 26;
0°C d T
A
A
A
d 70°C; V
d 70°C; V
d 70°C; V
Slew Rate
Slew Rate
DDQ
DDQ
0.500 V/ns
0.400 V/ns
0.300 V/ns
DDQ
0.500 V/ns
0.400 V/ns
0.300 V/ns
= 2.5V ±0.2V, V
= 2.5V ±0.2V, V
= 2.5V ±0.2V, V
1Gb
DD
DD
DD
= 2.5V ±0.2V
= 2.5V ±0.2V
= 2.5V ±0.2V
1.00
1.05
1.10
0.50
0.55
0.60
t
t
25
DS
IS
Symbol
t
t
t
XSNR
XSRD
WTR
n/a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
127.5
Min
200
1
t
QH -
1Gb: x4, x8, x16 DDR SDRAM
0.50
0.55
0.60
t
t
DH
IH
-75
1
1
1
t
DQSQ
Max
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
t
t
CK
ns
CK
ns
Units
Units
ns
ns
ns
ns
ns
ns
Notes
26