MT46V64M16P-6T IT:A Micron, MT46V64M16P-6T IT:A Datasheet - Page 30

• Manufacturer Part Number: MT46V64M16P-6T IT:A
• Description: DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron

Figure 13:
Figure 14:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. J; Core DDR Rev. E 7/11 EN
Reduced Drive Pull-Down Characteristics
Reduced Drive Pull-Up Characteristics
40. The voltage levels used are derived from a minimum V
41.
42. V
43.
39d. The driver pull-up current variation, within nominal voltage and temperature
39e. The full ratio variation of the MAX-to-MIN pull-up and pull-down current should
39f. The full ratio variation of the nominal pull-up to pull-down current should be
80
70
60
50
40
30
20
10
0
load. In practice, the voltage levels obtained from a properly terminated bus will pro-
vide significantly different voltage values.
V
can not be greater than 1/3 of the cycle rate. V
width d 3ns, and the pulse width can not be greater than 1/3 of the cycle rate.
t
prevail over
-10
-20
-30
-40
-50
-60
-70
-80
HZ (MAX) will prevail over
0.0
0
IH
DD
0.0
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 14 on page 30.
be between 0.71 and 1.4 for device drain-to-source voltages from 0.1V to 1.0V at
the same voltage and temperature.
unity ±10%, for device drain-to-source voltages from 0.1V to 1.0V.
overshoot: V
and V
DDQ
0.5
0.5
t
DQSCK (MIN) +
must track each other.
IH,max
1.0
1.0
V
DD
= V
V
Q - V
OUT
30
DD
(V)
OUT
t
DQSCK (MAX) +
t
(V)
Q
RPRE (MAX) condition.
1.5
1.5
+ 1.5V for a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
2.0
2.0
pulse width d 3ns, and the pulse width
t
IL
RPST (MAX) condition.
undershoot: V
1Gb: x4, x8, x16 DDR SDRAM
2.5
2.5
DD
level and the referenced test
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IL,min
=
–
t
LZ (MIN) will
1.5V for a pulse