MT46V64M16P-6T IT:A Micron, MT46V64M16P-6T IT:A Datasheet - Page 28

• Manufacturer Part Number: MT46V64M16P-6T IT:A
• Description: DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron

Figure 10:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. J; Core DDR Rev. E 7/11 EN
Derating Data Valid Window (
30. The input capacitance per pin group will not differ by more than this maximum
31. CK and CK# input slew rate must be t1 V/ns (t2 V/ns if measured differentially).
32. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/
33. V
34. The clock is allowed up to ±150ps of jitter. Each timing parameter is allowed to vary by
35.
36. READs and WRITEs with auto precharge are not allowed to be issued until
37. Any positive glitch must be less than 1/3 of the clock cycle and not more than 400mV
38. Normal output drive curves:
38b. The driver pull-down current variation, within nominal voltage and temperature
38a. The full driver pull-down current variation from MIN to MAX process; tempera-
amount for any given device.
DM/DQS slew rate is less than 0.5 V/ns, timing must be derated: 50ps must be added
to
-6T speed grades, the slew rate must be t0.5 V/ns. If the slew rate exceeds 4 V/ns,
functionality is uncertain.
the same amount.
t
and CK# inputs, collectively, during bank active.
can be satisfied prior to the internal PRECHARGE command being issued.
or 2.9V (300mV or 2.9V maximum for -5B), whichever is less. Any negative glitch must
be less than 1/3 of the clock cycle and not exceed either
whichever is more positive. The average cannot be below the 2.5V (2.6V for -5B) mini-
mum.
3.0ns
2.5ns
2.0ns
1.5ns
1.0ns
HP (MIN) is the lesser of
DD
t
DS and
ture and voltage will lie within the outer bounding lines of the V-I curve of
Figure 11 on page 29.
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 11 on page 29.
must not vary more than 4% if CKE is not active while any bank is active.
50/50
2.00
1.60
2.75
2.50
2.10
t
DH for each 100 mV/ns reduction in slew rate. For -5B and
1.97
1.58
2.71
2.46
2.07
t
QH –
49/51
1.94
1.55
2.68
2.43
2.04
t
t
CL (MIN) and
DQSQ)
28
1.91
1.53
2.64
2.39
2.01
Clock Duty Cycle
48/53
1.88
1.50
2.60
2.35
1.98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
t
1.85
1.48
2.56
2.31
1.95
CH (MIN) actually applied to the device CK
47/53
1.82
1.45
2.53
2.28
1.92
1Gb: x4, x8, x16 DDR SDRAM
1.79
1.43
2.49
2.24
1.89
–
300mV or 2.2V (2.4V for -5B),
46/54
©2000 Micron Technology, Inc. All rights reserved.
1.76
1.40
2.45
2.20
1.86
-6T @ t CK = 7.5ns
-75E / -75 @ t CK = 7.5ns
-6 @ t CK = 6ns
-6T @ t CK = 6ns
-5B @ t CK = 5ns
1.73
1.38
2.41
2.16
1.83
45/55
2.13
1.70
1.35
2.38
1.80
t
RAS (MIN)