S9S12G96F0CLL Freescale Semiconductor, S9S12G96F0CLL Datasheet - Page 1064

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S9S12G96F0CLL

Manufacturer Part Number
S9S12G96F0CLL
Description
16-bit Microcontrollers - MCU 16BIT 96K FLASH
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of S9S12G96F0CLL

Rohs
yes
Core
S12
Processor Series
MC9S12G
Data Bus Width
16 bit
Maximum Clock Frequency
25 MHz
Program Memory Size
96 KB
Data Ram Size
8 KB
On-chip Adc
Yes
Operating Supply Voltage
5 V
Operating Temperature Range
- 40 C to + 85 C
Package / Case
LQFP-100
Mounting Style
SMD/SMT

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128 KByte Flash Module (S12FTMRG128K1V1)
29.4.4.5
Table 29-29
EEPROM block.
1066
FCMD
FCMD
0x0C
0x0D
0x0A
0x0B
0x0E
0x02
0x03
0x04
0x06
0x07
0x08
0x09
0x01
0x02
Erase Verify Block
Erase Flash Block
Erase Verify Block
summarizes the valid EEPROM commands along with the effects of the commands on the
Program P-Flash
Erase All Blocks
Set User Margin
Set Field Margin
P-Flash Section
Unsecure Flash
Verify Backdoor
Erase Verify All
EEPROM Commands
Program Once
Erase P-Flash
Erase Verify
Access Key
Read Once
Command
Command
Sector
Blocks
Level
Level
Verify that all EEPROM (and P-Flash) blocks are erased.
Verify that the EEPROM block is erased.
Verify that a P-Flash block is erased.
Verify that a given number of words starting at the address provided are erased.
Read a dedicated 64 byte field in the nonvolatile information register in P-Flash block that
was previously programmed using the Program Once command.
Program a phrase in a P-Flash block.
Program a dedicated 64 byte field in the nonvolatile information register in P-Flash block
that is allowed to be programmed only once.
Erase all P-Flash (and EEPROM) blocks.
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN
bits in the FPROT register and the DPOPEN bit in the DFPROT register are set prior to
launching the command.
Erase a P-Flash (or EEPROM) block.
An erase of the full P-Flash block is only possible when FPLDIS, FPHDIS and FPOPEN
bits in the FPROT register are set prior to launching the command.
Erase all bytes in a P-Flash sector.
Supports a method of releasing MCU security by erasing all P-Flash (and EEPROM)
blocks and verifying that all P-Flash (and EEPROM) blocks are erased.
Supports a method of releasing MCU security by verifying a set of security keys.
Specifies a user margin read level for all P-Flash blocks.
Specifies a field margin read level for all P-Flash blocks (special modes only).
MC9S12G Family Reference Manual,
Table 29-29. EEPROM Commands
Table 29-28. P-Flash Commands
Function on EEPROM Memory
Function on P-Flash Memory
Rev.1.23
Freescale Semiconductor

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