STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 10
STF20N65M5
Manufacturer Part Number
STF20N65M5
Description
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
Manufacturer
STMicroelectronics
Datasheet
1.STW20N65M5.pdf
(21 pages)
Specifications of STF20N65M5
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
650 V
Continuous Drain Current
18 A, 72 A
Resistance Drain-source Rds (on)
0.19 Ohms
Mounting Style
Through Hole
Package / Case
TO-220 FP
Fall Time
7.5 ns
Gate Charge Qg
36 nC
Power Dissipation
130 W
Rise Time
7.5 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Package mechanical data
4
10/21
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK
is an ST trademark.
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
®