STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 3

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
1
Electrical ratings
Table 2.
1. I
Table 3.
1. When mounted on 1 inch² FR-4, 1 Oz copper board.
Table 4.
R
Symbol
Symbol
Symbol
R
dv/dt
R
I
thj-pcb
P
E
DM
thj-case
thj-amb
I
V
T
AR
SD
I
I
TOT
AS
T
GS
stg
D
D
j
(1)
(1)
≤ 18 A, di/dt ≤ 400 A/µs; V
(1)
Avalanche current, repetetive or not
repetetive (pulse width limited by T
Single pulse avalanche energy (starting
t
j
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
=25°C, I
Absolute maximum ratings
Thermal data
Avalanche characteristics
d
= I
AR
; V
Parameter
Parameter
Parameter
dd
DS
=50 V)
C
Doc ID 022865 Rev 2
peak < V
= 25 °C
(BR)DSS
C
C
= 25 °C
= 100 °C
jmax
, V
)
DD
=400 V
D
2
30
PAK
- 55 to 150
TO-220
I
Value
Value
Value
2
0.96
62.5
± 25
11.3
130
150
270
PAK,
18
72
15
4
Electrical ratings
TO-247
50
°C/W
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
V
A
A
A
A
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