STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 16
STF20N65M5
Manufacturer Part Number
STF20N65M5
Description
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
Manufacturer
STMicroelectronics
Datasheet
1.STW20N65M5.pdf
(21 pages)
Specifications of STF20N65M5
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
650 V
Continuous Drain Current
18 A, 72 A
Resistance Drain-source Rds (on)
0.19 Ohms
Mounting Style
Through Hole
Package / Case
TO-220 FP
Fall Time
7.5 ns
Gate Charge Qg
36 nC
Power Dissipation
130 W
Rise Time
7.5 ns
Available stocks
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Package mechanical data
16/21
Table 12.
Dim.
∅P
∅R
A1
b1
b2
L1
L2
A
D
E
S
b
c
e
L
TO-247 mechanical data
19.85
15.45
14.20
Min.
4.85
2.20
0.40
5.30
3.70
3.55
4.50
5.30
1.0
2.0
3.0
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
18.50
mm.
Typ.
5.45
5.50
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
5.60
4.30
3.65
5.50
5.70