STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 11

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 9.
Dim.
D1
A1
E1
V2
b2
c2
e1
J1
L1
L2
D
H
R
A
E
b
c
e
L
D²PAK (TO-263) mechanical data
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
10
15
0°
Doc ID 022865 Rev 2
Typ.
2.54
mm
0.4
Package mechanical data
10.40
15.85
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
11/21