STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 5

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
I
I
SD
t
t
c(off)
RRM
RRM
I
t
Q
Q
d(v)
r(v)
SD
t
t
f(i)
rr
rr
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 022865 Rev 2
I
I
V
I
V
(see
V
R
(see
Figure
SD
SD
SD
DD
DD
DD
G
= 18 A, V
= 18 A, di/dt = 100 A/µs
= 18 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure 19
Test conditions
Test conditions
22)
22)
GS
D
GS
j
and
= 150 °C
= 12 A,
= 0
= 10 V
Figure
22)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
11.5
288
342
4.7
7.5
7.5
27
28
43
4
Max. Unit
Max
1.5
18
72
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/21
A
A
V
A
A