STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 5
STF20N65M5
Manufacturer Part Number
STF20N65M5
Description
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
Manufacturer
STMicroelectronics
Datasheet
1.STW20N65M5.pdf
(21 pages)
Specifications of STF20N65M5
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
650 V
Continuous Drain Current
18 A, 72 A
Resistance Drain-source Rds (on)
0.19 Ohms
Mounting Style
Through Hole
Package / Case
TO-220 FP
Fall Time
7.5 ns
Gate Charge Qg
36 nC
Power Dissipation
130 W
Rise Time
7.5 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
I
I
SD
t
t
c(off)
RRM
RRM
I
t
Q
Q
d(v)
r(v)
SD
t
t
f(i)
rr
rr
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 022865 Rev 2
I
I
V
I
V
(see
V
R
(see
Figure
SD
SD
SD
DD
DD
DD
G
= 18 A, V
= 18 A, di/dt = 100 A/µs
= 18 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure 19
Test conditions
Test conditions
22)
22)
GS
D
GS
j
and
= 150 °C
= 12 A,
= 0
= 10 V
Figure
22)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
11.5
288
342
4.7
7.5
7.5
27
28
43
4
Max. Unit
Max
1.5
18
72
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/21
A
A
V
A
A