STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 13

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 10.
Figure 25. I²PAK (TO-262) drawing
DIM.
A1
b1
c2
e1
L1
L2
D
A
E
b
c
e
L
I²PAK (TO-262) mechanical data
min.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
10
13
Doc ID 022865 Rev 2
mm.
typ
Package mechanical data
10.40
max.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
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