AT91SAM9260B-CU-999 Atmel, AT91SAM9260B-CU-999 Datasheet - Page 208
![IC MCU ARM9 217LFBGA](/photos/12/13/121366/217-lfbga_sml.jpg)
AT91SAM9260B-CU-999
Manufacturer Part Number
AT91SAM9260B-CU-999
Description
IC MCU ARM9 217LFBGA
Manufacturer
Atmel
Series
AT91SAMr
Datasheet
1.AT91SAM9260B-CU-999.pdf
(798 pages)
Specifications of AT91SAM9260B-CU-999
Core Processor
ARM9
Core Size
16/32-Bit
Speed
180MHz
Connectivity
EBI/EMI, Ethernet, I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
POR, WDT
Number Of I /o
96
Program Memory Size
32KB (32K x 8)
Program Memory Type
ROM
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
217-LFBGA
Processor Series
AT91SAMx
Core
ARM926EJ-S
Data Bus Width
32 bit
Data Ram Size
8 KB
Interface Type
2-Wire, EBI, I2S, SPI, USART
Maximum Clock Frequency
180 MHz
Number Of Programmable I/os
96
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JTRACE-ARM-2M, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
AT91SAM-ICE, AT91-ISP, AT91SAM9260-EK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
For Use With
AT91SAM9260-EK - KIT EVAL FOR AT91SAM9260AT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
- Current page: 208 of 798
- Download datasheet (12Mb)
Figure 21-2. Write Burst, 32-bit SDRAM Access
SDRAMC_A[12:0]
21.5.2
6221I–ATARM–17-Jul-09
D[31:0]
SDWE
SDCS
SDCK
RAS
CAS
SDRAM Controller Read Cycle
Row n
parameters, additional clock cycles are inserted between precharge/active (t
active/write (t
Configuration Register” on page
The SDRAM Controller allows burst access, incremental burst of unspecified length or single
access. In all cases, the SDRAM Controller keeps track of the active row in each bank, thus
maximizing performance of the SDRAM. If row and bank addresses do not match the previous
row/bank address, then the SDRAM controller automatically generates a precharge command,
activates the new row and starts the read command. To comply with the SDRAM timing param-
eters, additional clock cycles on SDCK are inserted between precharge and active commands
(t
uration register of the SDRAM Controller. After a read command, additional wait states are
generated to comply with the CAS latency (1, 2 or 3 clock delays specified in the configuration
register).
For a single access or an incremented burst of unspecified length, the SDRAM Controller antici-
pates the next access. While the last value of the column is returned by the SDRAM Controller
on the bus, the SDRAM Controller anticipates the read to the next column and thus anticipates
the CAS latency. This reduces the effect of the CAS latency on the internal bus.
For burst access of specified length (4, 8, 16 words), access is not anticipated. This case leads
to the best performance. If the burst is broken (border, busy mode, etc.), the next access is han-
dled as an incrementing burst of unspecified length.
RP
) and between active and read command (t
t
RCD
= 3
col a
RCD
Dna
) commands. For definition of these timing parameters, refer to the
col b
Dnb
col c
Dnc
218. This is described in
col d
Dnd
col e
Dne
RCD
col f
Dnf
). These two parameters are set in the config-
col g
Dng
Figure 21-2
col h
Dnh
AT91SAM9260
col i
Dni
below.
col j
Dnj
RP
) commands and
col k
Dnk
“SDRAMC
col l
Dnl
208
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