LPC2939FBD208,551 NXP Semiconductors, LPC2939FBD208,551 Datasheet - Page 23

IC ARM9 MCU FLASH 768KB 208-LQFP

LPC2939FBD208,551

Manufacturer Part Number
LPC2939FBD208,551
Description
IC ARM9 MCU FLASH 768KB 208-LQFP
Manufacturer
NXP Semiconductors
Series
LPC2900r
Datasheet

Specifications of LPC2939FBD208,551

Core Processor
ARM9
Core Size
32-Bit
Speed
125MHz
Connectivity
CAN, EBI/EMI, I²C, LIN, SPI, UART/USART, USB, USB OTG
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
152
Program Memory Size
768KB (768K x 8)
Program Memory Type
FLASH
Eeprom Size
16K x 8
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 3.6 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
208-LQFP
Processor Series
LPC29
Core
ARM968E-S
3rd Party Development Tools
MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
OM11027
Package
208LQFP
Device Core
ARM968E-S
Family Name
LPC2900
Operating Supply Voltage
1.8|3.3 V
Data Bus Width
16|32 Bit
Number Of Programmable I/os
160
Interface Type
CAN/I2C/LIN/QSPI/UART/USB
On-chip Adc
24-chx10-bit
Number Of Timers
6
For Use With
568-4787 - BOARD EVAL LPC2939
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935287113551

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LPC2939FBD208,551
Manufacturer:
NXP Semiconductors
Quantity:
10 000
NXP Semiconductors
LPC2939_3
Product data sheet
6.8.2 Flash layout
With dual buffering, a secondary buffer line is used, the output of the flash being
considered as the primary buffer. On a primary buffer, hit data can be copied to the
secondary buffer line, which allows the flash to start a speculative read of the next flash
word.
Both buffer lines are invalidated after:
The modes of operation are listed in
Table 9.
The ARM processor can program the flash for ISP (In-System Programming) through the
flash memory controller. Note that the flash always has to be programmed by ‘flash words’
of 128 bits (four 32-bit AHB bus words, hence 16 bytes).
The flash memory is organized into eight ‘small’ sectors of 8 kB each and up to 11 ‘large’
sectors of 64 kB each. The number of large sectors depends on the device type. A sector
must be erased before data can be written to it. The flash memory also has sector-wise
protection. Writing occurs per page which consists of 4096 bits (32 flash words). A small
sector contains 16 pages; a large sector contains 128 pages.
Table 10
Table 10.
Synchronous timing
No buffer line
Single buffer line
Asynchronous timing
No buffer line
Single buffer line
Dual buffer line, single
speculative
Dual buffer line, always
speculative
Sector number
11
12
13
14
15
Initialization
Configuration-register access
Data-latch reading
Index-sector reading
gives an overview of the flash-sector base addresses.
Flash read modes
Flash sector overview
All information provided in this document is subject to legal disclaimers.
Sector size (kB)
8
8
8
8
8
Rev. 03 — 7 April 2010
for single (non-linear) reads; one flash-word read per word read
default mode of operation; most recently read flash word is kept until
another flash word is required
one flash-word read per word read
most recently read flash word is kept until another flash word is
required
on a buffer miss a flash read is done, followed by at most one
speculative read; optimized for execution of code with small loops
(less than eight words) from flash
most recently used flash word is copied into second buffer line; next
flash-word read is started; highest performance for linear reads
Table
ARM9 microcontroller with CAN, LIN, and USB
9.
Sector base address
0x2000 0000
0x2000 2000
0x2000 4000
0x2000 6000
0x2000 8000
LPC2939
© NXP B.V. 2010. All rights reserved.
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