LPC2939FBD208,551 NXP Semiconductors, LPC2939FBD208,551 Datasheet - Page 77

IC ARM9 MCU FLASH 768KB 208-LQFP

LPC2939FBD208,551

Manufacturer Part Number
LPC2939FBD208,551
Description
IC ARM9 MCU FLASH 768KB 208-LQFP
Manufacturer
NXP Semiconductors
Series
LPC2900r
Datasheet

Specifications of LPC2939FBD208,551

Core Processor
ARM9
Core Size
32-Bit
Speed
125MHz
Connectivity
CAN, EBI/EMI, I²C, LIN, SPI, UART/USART, USB, USB OTG
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
152
Program Memory Size
768KB (768K x 8)
Program Memory Type
FLASH
Eeprom Size
16K x 8
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 3.6 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
208-LQFP
Processor Series
LPC29
Core
ARM968E-S
3rd Party Development Tools
MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
OM11027
Package
208LQFP
Device Core
ARM968E-S
Family Name
LPC2900
Operating Supply Voltage
1.8|3.3 V
Data Bus Width
16|32 Bit
Number Of Programmable I/os
160
Interface Type
CAN/I2C/LIN/QSPI/UART/USB
On-chip Adc
24-chx10-bit
Number Of Timers
6
For Use With
568-4787 - BOARD EVAL LPC2939
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935287113551

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LPC2939FBD208,551
Manufacturer:
NXP Semiconductors
Quantity:
10 000
NXP Semiconductors
Table 38.
V
ground; positive currents flow into the IC; unless otherwise specified.
[1]
[2]
[3]
Table 39.
V
T
specified.
[1]
LPC2939_3
Product data sheet
Symbol
t
Symbol
f
t
f(o)
SPI
su(SPI_MISO)
vj
DD(CORE)
DD(CORE)
=
All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at T
temperature on wafer level. Cased products are tested at T
test conditions to cover the specified temperature and power supply voltage range.
Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages.
Bus capacitance C
All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at T
temperature on wafer level. Cased products are tested at T
test conditions to cover the specified temperature and power supply voltage range.
40
[1]
C to +85
= V
= V
Dynamic characteristic: I
Dynamic characteristics of SPI pins
DD(OSC_PLL)
DD(OSC_PLL)
Parameter
SPI operating frequency
SPI_MISO set-up time
9.3 Dynamic characteristics: I
9.4 Dynamic characteristics: SPI
Parameter
output fall time
C; all voltages are measured with respect to ground; positive currents flow into the IC; unless otherwise
b
from 10 pF to 400 pF.
; V
; V
Fig 27. SPI data input set-up time in SSP Master mode
DD(IO)
DD(IO)
SDOn
SCKn
shifting edges
SDIn
= 2.7 V to 3.6 V; V
= 2.7 V to 3.6 V; V
2
C-bus pins
All information provided in this document is subject to legal disclaimers.
Conditions
master operation
slave operation
T
measured in SPI
Master mode;
see
Rev. 03 — 7 April 2010
DDA(ADC3V3)
DDA(ADC3V3)
amb
Figure 27
Conditions
V
= 25 C;
amb
amb
IH
to V
= 25 C (final testing). Both pre-testing and final testing use correlated
= 25 C (final testing). Both pre-testing and final testing use correlated
2
C-bus interface
= 3.0 V to 3.6 V; all voltages are measured with respect to
IL
= 3.0 V to 3.6 V; V
t
su(SPI_MISO)
[1]
ARM9 microcontroller with CAN, LIN, and USB
Min
20 + 0.1  C
Min
1
1
-
65024
65024
DDA(ADC5V0)
f
f
clk(SPI)
clk(SPI)
b
[3]
Typ
-
-
11
Typ
-
= 3.0 V to 5.5 V;
[2]
sampling edges
LPC2939
© NXP B.V. 2010. All rights reserved.
Max
1
1
-
2
4
amb
amb
Max
-
f
f
clk(SPI)
clk(SPI)
= 85 C ambient
= 85 C ambient
002aae695
Unit
MHz
MHz
ns
77 of 99
Unit
ns

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