LPC2939FBD208,551 NXP Semiconductors, LPC2939FBD208,551 Datasheet - Page 77
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LPC2939FBD208,551
Manufacturer Part Number
LPC2939FBD208,551
Description
IC ARM9 MCU FLASH 768KB 208-LQFP
Manufacturer
NXP Semiconductors
Series
LPC2900r
Datasheet
1.LPC2939FBD208551.pdf
(99 pages)
Specifications of LPC2939FBD208,551
Core Processor
ARM9
Core Size
32-Bit
Speed
125MHz
Connectivity
CAN, EBI/EMI, I²C, LIN, SPI, UART/USART, USB, USB OTG
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
152
Program Memory Size
768KB (768K x 8)
Program Memory Type
FLASH
Eeprom Size
16K x 8
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 3.6 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
208-LQFP
Processor Series
LPC29
Core
ARM968E-S
3rd Party Development Tools
MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
OM11027
Package
208LQFP
Device Core
ARM968E-S
Family Name
LPC2900
Operating Supply Voltage
1.8|3.3 V
Data Bus Width
16|32 Bit
Number Of Programmable I/os
160
Interface Type
CAN/I2C/LIN/QSPI/UART/USB
On-chip Adc
24-chx10-bit
Number Of Timers
6
For Use With
568-4787 - BOARD EVAL LPC2939
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935287113551
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LPC2939FBD208,551
Manufacturer:
NXP Semiconductors
Quantity:
10 000
NXP Semiconductors
Table 38.
V
ground; positive currents flow into the IC; unless otherwise specified.
[1]
[2]
[3]
Table 39.
V
T
specified.
[1]
LPC2939_3
Product data sheet
Symbol
t
Symbol
f
t
f(o)
SPI
su(SPI_MISO)
vj
DD(CORE)
DD(CORE)
=
All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at T
temperature on wafer level. Cased products are tested at T
test conditions to cover the specified temperature and power supply voltage range.
Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages.
Bus capacitance C
All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at T
temperature on wafer level. Cased products are tested at T
test conditions to cover the specified temperature and power supply voltage range.
40
[1]
C to +85
= V
= V
Dynamic characteristic: I
Dynamic characteristics of SPI pins
DD(OSC_PLL)
DD(OSC_PLL)
Parameter
SPI operating frequency
SPI_MISO set-up time
9.3 Dynamic characteristics: I
9.4 Dynamic characteristics: SPI
Parameter
output fall time
C; all voltages are measured with respect to ground; positive currents flow into the IC; unless otherwise
b
from 10 pF to 400 pF.
; V
; V
Fig 27. SPI data input set-up time in SSP Master mode
DD(IO)
DD(IO)
SDOn
SCKn
shifting edges
SDIn
= 2.7 V to 3.6 V; V
= 2.7 V to 3.6 V; V
2
C-bus pins
All information provided in this document is subject to legal disclaimers.
Conditions
master operation
slave operation
T
measured in SPI
Master mode;
see
Rev. 03 — 7 April 2010
DDA(ADC3V3)
DDA(ADC3V3)
amb
Figure 27
Conditions
V
= 25 C;
amb
amb
IH
to V
= 25 C (final testing). Both pre-testing and final testing use correlated
= 25 C (final testing). Both pre-testing and final testing use correlated
2
C-bus interface
= 3.0 V to 3.6 V; all voltages are measured with respect to
IL
= 3.0 V to 3.6 V; V
t
su(SPI_MISO)
[1]
ARM9 microcontroller with CAN, LIN, and USB
Min
20 + 0.1 C
Min
1
1
-
65024
65024
DDA(ADC5V0)
f
f
clk(SPI)
clk(SPI)
b
[3]
Typ
-
-
11
Typ
-
= 3.0 V to 5.5 V;
[2]
sampling edges
LPC2939
© NXP B.V. 2010. All rights reserved.
Max
1
1
-
2
4
amb
amb
Max
-
f
f
clk(SPI)
clk(SPI)
= 85 C ambient
= 85 C ambient
002aae695
Unit
MHz
MHz
ns
77 of 99
Unit
ns