MC56F8014VFAE Freescale Semiconductor, MC56F8014VFAE Datasheet - Page 99

• Manufacturer Part Number: MC56F8014VFAE
• Description: IC DIGITAL SIGNAL CTRLR 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: 56F8xxxr

Specifications of MC56F8014VFAE

• Core Processor: 56800
• Core Size: 16-Bit
• Speed: 32MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 26
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Ram Size: 2K x 16
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 32-LQFP
• Cpu Family: 56F8xxx
• Device Core Size: 16b
• Frequency (max): 32MHz
• Interface Type: I2C/SCI/SPI
• Total Internal Ram Size: 4KB
• # I/os (max): 26
• Number Of Timers - General Purpose: 1
• Operating Supply Voltage (typ): 3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• On-chip Adc: 2(4-chx12-bit)
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 105C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Package Type: LQFP
• Product: DSCs
• Data Bus Width: 16 bit
• Processor Series: MC56F80xx
• Core: 56800E
• Numeric And Arithmetic Format: Fixed-Point
• Device Million Instructions Per Second: 32 MIPs
• Maximum Clock Frequency: 32 MHz
• Number Of Programmable I/os: 26
• Data Ram Size: 4 KB
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Data Rom Size: 16 KB
• Development Tools By Supplier: MC56F8037EVM, DEMO56F8014-EE, DEMO56F8013-EE
• Minimum Operating Temperature: - 40 C
• For Use With: DEMO56F8014-E - BOARD DEMO MC56F8014 W/UNIV PSDEMO56F8014 - BOARD DEMO MC56F8014 W/US PSAPMOTOR56F8000E - KIT DEMO MOTOR CTRL SYSTEMDEMO56F8014-EE - BOARD DEMO FOR 56F8014
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

Figure 10-3
10.4 Flash Memory Characteristics
Freescale Semiconductor
•
•
•
•
1. There is additional overhead which is part of the programming sequence. See the 56F801X Peripheral Reference
2. Specifies page erase time. There are 512 bytes per page in the Program Flash memory.
Characteristic
Program time
Erase time
Mass erase time
Manual for details.
Input Signal
Note: The midpoint is V
Active state, when a bus or signal is driven, and enters a low impedance state
Tri-stated, when a bus or signal is placed in a high impedance state
Data Valid state, when a signal level has reached V
Data Invalid state, when a signal level is in transition between V
Data Invalid State
shows the definitions of the following signal states:
2
1
Data1 Valid
Data1
Figure 10-2 Input Signal Measurement References
Fall Time
IL
+ (V
Data Active
Midpoint1
IH
Table 10-9 Flash Timing Parameters
V
– V
IH
IL
Figure 10-3 Signal States
)/2.
56F8014 Technical Data, Rev. 11
Data2 Valid
Symbol
T
T
Data2
T
erase
prog
me
Low
V
IL
OL
Min
100
20
20
or V
Tri-stated
OH
Data
OL
Typ
Rise Time
—
—
—
and V
High
OH
Data3 Valid
Data Active
Data3
Max
40
—
—
Flash Memory Characteristics
90%
50%
10%
Unit
ms
ms
μs
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