HD64F2623FA20J Renesas Electronics America, HD64F2623FA20J Datasheet - Page 674

• Manufacturer Part Number: HD64F2623FA20J
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2623FA20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 19 ROM (Preliminary)
To select user program mode, select a mode that enables the on-chip flash memory (mode 6 or 7),
and apply a high level to the FWE pin. In this mode, on-chip supporting modules other than flash
memory operate as they normally would in modes 6 and 7.
The flash memory itself cannot be read while the SWE1 bit is set to 1 to perform programming or
erasing, so the control program that performs programming and erasing should be run in on-chip
RAM or external memory. If the program is to be located in external memory, the instruction for
writing to flash memory, and the following instruction, should be placed in on-chip RAM.
Figure 19.9 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Rev. 5.00 Jan 10, 2006 page 648 of 1042
REJ09B0275-0500
Notes: Do not apply a constant high level to the FWE pin. Apply a high level to the FWE pin
only when the flash memory is programmed or erased. Also, while a high level is
applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For further information on FWE application and disconnection, see section 19.13,
Flash Memory Programming and Erasing Precautions.
Figure 19.9 User Program Mode Execution Procedure
Write the FWE assessment program and
transfer program (and the program/erase
control program if necessary) beforehand
Branch to flash memory application
program (flash memory rewriting)
Branch to program/erase control
Transfer program/erase control
Execute program/erase control
MD2, MD1, MD0 = 110, 111
program in RAM area
program to RAM
FWE = high *
Clear FWE *
Reset-start
program