UPD78F0535GB(T)-UEU-A NEC, UPD78F0535GB(T)-UEU-A Datasheet - Page 693

• Manufacturer Part Number: UPD78F0535GB(T)-UEU-A
• Description: 8BIT MCU, 60K FLASH, 3KB RAM, LQFP
• Manufacturer: NEC

Specifications of UPD78F0535GB(T)-UEU-A

• Controller Family/series: UPD78
• No. Of I/o's: 55
• Ram Memory Size: 3KB
• Cpu Speed: 20MHz
• No. Of Timers: 8
• No. Of Pwm: RoHS Compliant
• Core Size: 8bit
• Program Memory Size: 60KB
• Oscillator Type: External, Internal

Flash Memory Programming Characteristics
(T
• Basic characteristics
Notes 1.
Remarks 1. f
V
Erase time
Write time (in 8-bit units)
Number of rewrites per chip
A
DD
= −40 to +125°C, 2.7 V ≤ V
supply current
2.
3.
Notes 1, 2
2. For serial write operation characteristics, refer to 78K0/Kx2 Flash Memory Programming
Parameter
PG-FP4, is used and the rewrite time during self programming, see Tables 26-12 and 26-13.
Characteristic of the flash memory. For the characteristic when a dedicated flash memory programmer,
The prewrite time before erasure and the erase verify time (writeback time) are not included.
When a product is first written after shipment, “erase → write” and “write only” are both taken as one
rewrite.
CHAPTER 32 ELECTRICAL SPECIFICATIONS ((A2) GRADE PRODUCTS: T
(Programmer) Application Note (U17739E).
XP
: Main system clock oscillation frequency
All block
Block unit
Note 1
DD
I
T
T
T
C
Symbol
= EV
DD
eraca
erasa
wrwa
erwr
DD
≤ 5.5 V, AV
f
Retention: 15 years
1 erase + 1 write after erase = 1 rewrite
XP
= 10 MHz (TYP.), 20 MHz (MAX.)
User’s Manual U17260EJ6V0UD
REF
≤ V
Conditions
DD
, V
SS
= EV
SS
(A2) grade products: T
= AV
Note 3
SS
= 0 V)
MIN.
100
A
= −40 to +125°C)
TYP.
4.5
20
20
10
A
= −40 to +125°C
MAX.
16.0
200
200
100
Times
Unit
mA
ms
ms
µ
s
693