MT45W8MW16BGX-701 IT Micron Technology Inc, MT45W8MW16BGX-701 IT Datasheet - Page 26

• Manufacturer Part Number: MT45W8MW16BGX-701 IT
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-701 IT

• Operating Temperature (max): 85C
• Operating Temperature (min): -40C
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Table 3:
Drive Strength (BCR[5:4]) Default = Outputs Use Half-Drive Strength
Table 4:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
BCR
[3]
1
Burst
Wrap
BCR[5]
Wrap (Decimal)
No
0
0
1
1
Sequence and Burst Length
Drive Strength
Starting
Address
14
15
30
31
...
...
0
1
2
3
4
5
6
7
BCR[4]
4-Word
Length
0
1
0
1
Linear
0-1-2-3
1-2-3-4
2-3-4-5
3-4-5-6
Burst
The output driver strength can be altered to full, one-half, or one-quarter strength to
adjust for different data bus loading scenarios. The reduced-strength options are
intended for stacked chip (Flash + CellularRAM) environments when there is a dedicated
memory bus. The reduced-drive-strength option minimizes the noise generated on the
data bus during READ operations. Full output drive strength should be selected when
using a discrete CellularRAM device in a more heavily loaded data bus environment.
Outputs are configured at half-drive strength during testing. See Table 4 for additional
information.
3-4-5-6-7-8-9-10 3-4-5-6-7-8-9-10-11-12-13-14-
5-6-7-8-9-10-11-
7-8-9-10-11-12-
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-8
2-3-4-5-6-7-8-9
4-5-6-7-8-9-10-
Burst Length
6-7-8-9-10-11-
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
8-Word
Linear
12-13
13-14
Drive Strength
11
12
(default)
Full
1/2
1/4
(Continued)
4-5-6-7-8-9-10-11-12-13-14-15-
7-8-9-10-11-12-13-14-...-17-18-
1-2-3-4-5-6-7-8-9-10-11-12-13-
6-7-8-9-10-11-12-13-14-...-16-
0-1-2-3-4-5-6-7-8-9-10-11-12-
2-3-4-5-6-7-8-9-10-11-12-13-
5-6-7-8-9-10-11-12-13-...-15-
14-15-16-17-18-19-...-23-24-
15-16-17-18-19-20-...-24-25-
26
16-17-18-19-20
17-18-19-20-21
25-26-27-28-29
26-27-28-29-30
Burst Length
14-15-16-17
15-16-17-18
16-17-18-19
19-20-21-22
16-Word
13-14-15
14-15-16
Linear
...
Impedance Typ (Ω)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
Reserved
25–30
100
50
14-15-16-...-43-
15-16-17-...-44-
30-31-32-...-59-
31-32-33-...-60-
Burst Length
0-1-2...--29-30-
1-2-3-...-30-31-
2-3-4-...-31-32-
3-4-5-...-32-33-
4-5-6-...-33-34-
5-6-7-...-34-35-
6-7-8-...-35-36-
7-8-9-...-36-37-
32-Word
Linear
44-45
45-46
60-61
61-62
31
32
33
34
35
36
37
38
...
...
Use Recommendation
CL = 30pF to 50pF
CL = 15pF to 30pF
104 MHz at light load
CL = 15pF or lower
©2004 Micron Technology, Inc. All rights reserved.
6-7-8-9-10-11-12…
14-15-16-17-18-19-
15-16-17-18-19-20-
30-31-32-33-34-35-
31-32-33-34-35-36-
5-6-7-8-9-10-11…
4-5-6-7-8-9-10-…
0-1-2-3-4-5-6-…
1-2-3-4-5-6-7-…
2-3-4-5-6-7-8-…
3-4-5-6-7-8-9-…
7-8-9-10-11-12-
Continuous
Linear
Burst
20-…
21-…
36-...
37-...
13…
...
...