MT45W8MW16BGX-701 IT Micron Technology Inc, MT45W8MW16BGX-701 IT Datasheet - Page 9

• Manufacturer Part Number: MT45W8MW16BGX-701 IT
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-701 IT

• Operating Temperature (max): 85C
• Operating Temperature (min): -40C
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Part-Numbering Information
Figure 3:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
Part Number Chart
Notes:
Micron CellularRAM devices are available in several different configurations and
densities. (See Figure 3.)
Micron Technology
Product Family
45 = PSRAM/CellularRAM memory
Operating Core Voltage
W = 1.70–1.95V
Address Locations
M = Megabits
Operating Voltage
W = 1.7–3.6V
Bus Configuration
16 = x16
READ/WRITE Operation Mode
B = Asynchronous/Page/Burst
Package Codes
GX = 54-ball “green” VFBGA (6 x 9 grid, 0.75mm pitch, 8.0mm x 10.0mm x 1.0mm)
1. Valid part number combinations: After building the part number from the part numbering
2. Device marking: Due to the size of the package, the Micron standard part number is not
3. The 3.6V I/O exceeds the CellularRAM 1.5 Workgroup specification of 1.95V.
chart above, please go to the Micron Parametric Part Search Web site at
http://www.micron.com/support/designsupport/tools/fbga/decoder to verify that the part
number is offered and valid. If the device required is not on this list, please contact the
factory.
printed on the top of the device. Instead, an abbreviated device mark consisting of a five-
digit alphanumeric code is used. The abbreviated device marks are cross-referenced to the
Micron part numbers at http://www.micron.com/support/designsupport/tools/fbga/decoder.
To view the location of the abbreviated mark on the device, please refer to customer service
note CSN-11, “Product Mark/Label,” at http://www.micron.com/csn.
3
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
MT 45 W 8M W 16
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
B GX -70
Page/Burst CellularRAM 1.5 Memory
8
WT ES
©2004 Micron Technology, Inc. All rights reserved.
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
Operating Temperature
WT = –30°C to +85°C
IT = –40°C to +85°C
Standby Power Options
Blank = Standard
L = Low power
Frequency
13 = 133 MHz
Access/Cycle Time
70 = 70ns
85 = 85ns
6 = 66 MHz
8 = 80 MHz
1 = 104 MHz