MT45W8MW16BGX-701 IT Micron Technology Inc, MT45W8MW16BGX-701 IT Datasheet - Page 40

• Manufacturer Part Number: MT45W8MW16BGX-701 IT
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-701 IT

• Operating Temperature (max): 85C
• Operating Temperature (min): -40C
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Table 17:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
Parameter
Address and ADV# LOW setup time
Address hold from ADV# HIGH (fixed
latency)
CE# HIGH between subsequent burst or
mixed-mode operations
Maximum CE# pulse width
CE# LOW to WAIT valid
Clock period
CE# setup to CLK active edge
Hold time from active CLK edge
Chip disable to WAIT High-Z output
CLK rise or fall time
CLK to WAIT
valid
CLK HIGH or LOW time
Setup time to active CLK edge
.
Burst WRITE Cycle Timing Requirements
Variable LC = 4
Fixed LC = 8
All other LCs
Notes:
1.
2. A refresh opportunity must be provided every
3. Low-Z to High-Z timings are tested with the circuit shown in Figure 27 on page 36. The
t
either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than
15ns.
High-Z timings measure a 100mV transition from either V
AS is required if
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
AS
AVH
CBPH
CEM
CEW
CLK
CSP
HD
HZ
KHKL
KHTL
KP
SP
t
CSP > 20ns.
(133 MHz)
Min
7.5
2.5
1.5
0
2
5
1
3
2
-7013
40
Max Min Max Min Max Min Max
7.5
1.2
5.5
4
7
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(104 MHz)
9.62
0
2
5
1
3
2
3
3
Page/Burst CellularRAM 1.5 Memory
-701
7.5
1.6
t
4
8
7
7
CEM. A refresh opportunity is satisfied by
12.5
(80 MHz)
0
2
6
1
4
2
4
3
-708
OH
7.5
1.8
4
8
9
9
or V
©2004 Micron Technology, Inc. All rights reserved.
OL
(66 MHz)
15
0
2
8
1
5
2
5
3
toward V
-856
7.5
2.0
11
11
4
8
CC
Unit Notes
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Q/2.
1
2
2
3