PEF82912FV1.4 Infineon Technologies, PEF82912FV1.4 Datasheet - Page 146

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PEF82912FV1.4

Manufacturer Part Number
PEF82912FV1.4
Description
ISDN Interface ISDN
Manufacturer
Infineon Technologies
Datasheet

Specifications of PEF82912FV1.4

Mounting Style
SMD/SMT
Package / Case
MQFP-64
Lead Free Status / Rohs Status
 Details

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Quantity
Price
Part Number:
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Quantity:
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Resistors of the External Hybrid R3, R4 and R
R3 = 1.3 k
R4 = 1.0 k
R
Resistors on the Line Side R
Optional use of up to 2x20
requires compensation resistors R
R
R
27 nF Capacitor C
To achieve optimum performance the 27 nF capacitor should be MKT. A Ceramic
capacitor is not recommended.
Tolerances
• Rs: 1%
• C=27 nF: 10-20%
• L=14.5 mH: 10%
3.3.3
In order to comply to the physical requirements of ITU recommendation I.430 and
considering the national requirements concerning overvoltage protection and
electromagnetic compatibility (EMC), the S-transceiver needs some additional circuitry.
S-Transformer Parameters
The following
Table 32
Transformer Parameters
Transformer ratio;
Device side : Line side
Main inductance of windings on the line side
Leakage inductance of windings on the line side L
Data Sheet
T
B
OUT
, R
= 9.5
L
: see
: see
2R
2R
S-Transceiver
Table 38
Table 31
Table 32
PTC
PTC
S-Transformer Parameters
+ 8R
+ 4(2R
COMP
lists parameters of a typical S-transformer:
COMP
= 40
PTC
+ 2R
resistors (2xR
COMP
/ Chip Side R
T
+ R
depending on R
OUT
132
PTC
+ R
T
T
) on the line side of the transformer
B
Symbol Value
n
L
)
H
S
R
L
PTC
= 135
2 : 1
typ. 30
typ. <3
:
Operational Description
PEF 82912/82913
Unit
mH
µH
2001-03-30
(1)
(2)

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