mt48lc1m16a1 Micron Semiconductor Products, mt48lc1m16a1 Datasheet - Page 47

• Manufacturer Part Number: mt48lc1m16a1
• Description: Synchronous Dram
• Manufacturer: Micron Semiconductor Products

TIMING PARAMETERS
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 4.
16Mb: x16 IT SDRAM
16MSDRAMx16IT.p65 – Rev. 5/99
COMMAND
SYMBOL* MIN
t
t
t
t
t
t
t
t
t
AH
AS
CH
CL
CK (3)
CK (2)
CK (1)
CKH
CKS
DQM
A0-A9
CKE
A10
CLK
DQ
BA
3
2. A8 and A9 = “Don’t Care.”
3. DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte.
4. Faster frequencies will require two clocks (when
t CMS
t CKS
t AS
t AS
t AS
2.5
2.5
20
ACTIVE
1
2
6
8
1
2
T0
ROW
ROW
BANK
t CMH
t CKH
-6
t AH
t AH
t AH
MAX
t RCD
t RAS
t RC
t CK
MIN
2.75
2.75
T1
NOP
10
25
1
2
7
1
2
-7
ENABLE AUTO PRECHARGE
MAX
t CMS
t CL
t DS
COLUMN
(A0 - A7)
WRITE – WITH AUTO PRECHARGE
WRITE
T2
BANK
D
IN
MIN
t CMH
13
25
t CH
t DH
1
2
3
3
8
1
2
m
m
2
-8A
MAX
t DS
D
IN
T3
NOP
m + 1
UNITS
t DH
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WR >
t DS
47
D
IN
T4
t
NOP
CK).
m + 2
t DH
SYMBOL* MIN
t
t
t
t
t
t
t
t
t
CMH
CMS
DH
DS
RAS
RC
RCD
RP
WR
t DS
D
IN
T5
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
m + 3
1 + 4ns
t DH
42
60
18
18
1
2
1
2
t WR
-6
120,000
4
MAX
1
T6
NOP
1 + 3ns
MIN
42
70
20
21
1
2
1
2
-7
120,000
MAX
t RP
NOP
T7
16Mb: x16
1 + 2ns
MIN
IT SDRAM
48
80
24
24
1
2
1
2
©1999, Micron Technology, Inc.
-8A
ACTIVE
ROW
BANK
120,000
ROW
T8
MAX
DON’T CARE
UNDEFINED
UNITS
t
ns
ns
ns
ns
ns
ns
ns
ns
CK