RG82845M Intel, RG82845M Datasheet - Page 132

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RG82845M

Manufacturer Part Number
RG82845M
Description
Chipset Memory Controller Hub Mobile
Manufacturer
Intel
Datasheet

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132
®
82845MP/82845MZ Chipset-Mobile (MCH-M)
Miscellaneous Signals
NOTES:
Symbol
V
I
I
1. Determined with 0.75x MCH-M DDR buffer strength setting.
2.
V
CROSS
V
LEAK
LEAK
V
V
I
C
V
V
C
V
V
C
V
V
C
I
OH
OL
OH
OL
IL
IH
IN
IL
IH
IN
IL
IH
IN
IL
IH
IN
In suspend, not all non-CKE pins will be pulled up; there will be an indeterminate number that will
be pulled low.
Signal
Group
(o)
(o)
(o)
(o)
(o)
(o)
(o)
(o)
(p)
(p)
(p)
(p)
(q)
(q)
(q)
(q)
(v)
(v)
(v)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Current
Output High Current
Input Leakage Current
Input Capacitance
Input Low Voltage
Input High Voltage
Input Leakage Current
Input Capacitance
Input Low Voltage
Input High Voltage
Crossing Voltage
Input Capacitance
Input Low Voltage
Input High Voltage
Input Capacitance
Parameter
Datasheet
0.45x(V
HIREF + 0.15
0.9 x VCC1_8
4.690
0.660
Min
2.58
0.94
2.4
1.2
2.0
-1
IH
- V
IL
)
0.5x(V
Nom
0.710
0
IH
- V
IL
)
0.55x(V
0.1 x VCC1_8
HIREF - 0.15
-150, +15
5.370
0.850
Max
±100
3.17
0.8
1.1
0.8
1.4
1
IH
- V
IL
)
Unit
mA
mA
µA
pF
µA
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
V
I
I
@V
@V
0<Vin<
VCC1_8
0<Vin<VCC3_3
250687-002
OL
OH
= 1 mA
= 1 mA
OL_HI
OH_HI
Notes
max
max
R

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