S71PL032J SPANSION [SPANSION], S71PL032J Datasheet - Page 106

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S71PL032J

Manufacturer Part Number
S71PL032J
Description
STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
Manufacturer
SPANSION [SPANSION]
Datasheet

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1. 16Mb: A2 ~ A19, 32Mb: A2 ~ A20, 64Mb: A2 ~ A21.
106
t
output voltage levels.
At any given temperature and voltage condition, t
to device interconnection.
t
If invalid address signals shorter than min. t
timing (t
HZ
OE
Write Timings
(max) is met only when OE# becomes enabled after t
Address
CS1#
CS2
UB#, LB#
WE#
Data in
Data out
Address
CS1#
CS2
UB#, LB#
WE#
Data in
Data out
and t
RC
OHZ
) or needs to sustain standby state for min. t
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to
Figure 29. Write Cycle #1 (WE# Controlled)
Figure 30. Write Cycle #2 (CS1# Controlled)
Data Undefined
High-Z
t
t
AS
AS
A d v a n c e
RC
are continuously repeated for over 4µs, the device needs a normal read
Type 2 pSRAM
HZ
(Max.) is less than t
High-Z
t
WHZ
RC
AA
t
t
AW
at least once in every 4µs.
CW
t
AW
(max).
t
t
t
WC
WC
CW
t
t
t
BW
WP
WP
t
I n f o r m a t i o n
BW
LZ
t
DW
t
DW
Data Valid
(Min.) both for a given device and from device
Data Valid
t
WR
t
WR
t
DH
t
DH
t
OW
pSRAM_Type02_15A0 May 3, 2004
High-Z

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