S71PL032J SPANSION [SPANSION], S71PL032J Datasheet - Page 35

• Manufacturer Part Number: S71PL032J
• Description: STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
• Manufacturer: SPANSION [SPANSION]

August 12, 2004 S29PL127J_064J_032J_MCP_00_A3
Writing Commands/Command Sequences
Standby Mode
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to V
The device features an Unlock Bypass mode to facilitate faster programming.
Once a bank enters the Unlock Bypass mode, only two write cycles are required
to program a word, instead of four. The “Word Program Command Sequence”
section has details on programming data to the device using both standard and
Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 4
dress” is the set of address bits required to uniquely select a bank. Similarly, a
“sector address” refers to the address bits required to uniquely select a sector.
The “Command Definitions” section has details on erasing a sector or the entire
chip, or suspending/resuming the erase operation.
I
the write mode. See the timing specification tables and timing diagrams in the
Reset for write operations.
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This
function is primarily intended to allow faster manufacturing throughput at the
factory.
If the system asserts V
mentioned Unlock Bypass mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the time required for program
operations. The system would use a two-cycle program command sequence as
required by the Unlock Bypass mode. Removing V
turns the device to normal operation. Note that V
WP#/ACC for operations other than accelerated programming, or device damage
may result. In addition, the WP#/ACC pin should be raised to V
use. That is, the WP#/ACC pin should not be left floating or unconnected; incon-
sistent behavior of the device may result.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the au-
toselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ15–DQ0. Standard
read cycle timings apply in this mode. Refer to the Secured Silicon Sector Ad-
dresses and Autoselect Command Sequence for more information.
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
The device enters the CMOS standby mode when the CE# and RESET# pins are
both held at V
V
will be in the standby mode, but the standby current will be greater. The device
CC2
IH
.) If CE# and RESET# are held at V
in the DC Characteristics table represents the active current specification for
indicates the set of address space that each sector occupies. A “bank ad-
IL
, and OE# to V
A d v a n c e
IO
± 0.3 V. (Note that this is a more restricted voltage range than
S29PL127J/S29PL064J/S29PL032J for MCP
HH
IH
on this pin, the device automatically enters the afore-
.
I n f o r m a t i o n
IH
, but not within V
HH
HH
from the WP#/ACC pin re-
must not be asserted on
IO
± 0.3 V, the device
CC
when not in
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