S71PL032J SPANSION [SPANSION], S71PL032J Datasheet - Page 69

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S71PL032J

Manufacturer Part Number
S71PL032J
Description
STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
Manufacturer
SPANSION [SPANSION]
Datasheet

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August 12, 2004 S29PL127J_064J_032J_MCP_00_A3
Chip Erase Command Sequence
Note:
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Table
for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read
mode and addresses are no longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write
Operation Status section for information on these status bits.
Any commands written during the chip erase operation are ignored. Note that Se-
cured Silicon Sector, autoselect, and CFI functions are unavailable when a
[program/erase] operation is in progress. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the chip erase com-
mand sequence should be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
See
A d v a n c e
Table 17
Increment Address
for program command sequence.
S29PL127J/S29PL064J/S29PL032J for MCP
Figure 4. Program Operation
I n f o r m a t i o n
Embedded
in progress
algorithm
Program
17
No
shows the address and data requirements
Command Sequence
Write Program
Last Address?
Programming
from System
Verify Data?
Completed
Data Poll
START
Yes
Yes
No
69

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