S71PL032J SPANSION [SPANSION], S71PL032J Datasheet - Page 138

• Manufacturer Part Number: S71PL032J
• Description: STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
• Manufacturer: SPANSION [SPANSION]

DC Characteristics
(Under Recommended Conditions Unless Otherwise Noted)
Notes:
1. All voltages are referenced to V
2. DC Characteristics are measured after following POWER-UP timing.
3. I
138
Input Leakage
Current
Output Leakage
Current
Output High
Voltage Level
Output Low
Voltage Level
V
Down Current
V
Current
V
Active Current
V
Read Current
DD
DD
DD
DD
Parameter
OUT
Power
Standby
Page
depends on the output load conditions.
Symbol
I
I
I
I
I
I
I
I
DDP16
I
V
V
DDPS
DDP4
DDP8
DDS1
DDA1
DDA2
DDA3
I
DDS
I
LO
OH
LI
OL
V
V
V
I
V
V
CE2 ≤ 0.2 V
V
V
CE1 = CE2 = V
V
V
CE1 = CE2 ≥ V
V
V
CE1 = V
I
V
CE1 = V
I
OL
OUT
OUT
IN
OUT
DD
DD
IN
DD
IN
DD
IN
DD
IN
DD
= V
= 1mA
≤ 0.2V or V
= V
= V
= V
=0mA
=0mA, t
= V
= V
= V
= V
= V
= V
= V
SS
SS
.
IH
IH
IH
DD
DD
DD
DD
DD
DD
IL
IL
SS
or V
or V
or V
to V
and CE2= V
and CE2= V
(min), I
max.,
max.,
max.,
max.,
max., V
to V
PRC
IL
IL
IL
DD
IN
DD
IH
,
,
DD
= min.
Test Conditions
≥ V
– 0.2V
, Output Disable
OH
IN
A d v a n c e
DD
= –0.5mA
= V
IH
IH
– 0.2V,
,
,
IH
pSRAM Type 7
or V
t
t
IL
RC
RC
,
TA< +85
TA< +40
16M Partial
4M Partial
8M Partial
/ t
/ t
SLEEP
WC
WC
I n f o r m a t i o n
= min.
= 1µs
°
°
C
C
Min.
-1.0 +1.0 -1.0 +1.0 -1.0 +1.0
-1.0 +1.0 -1.0 +1.0 -1.0 +1.0
2.2
—
—
—
—
—
N/A
N/A
N/A
N/A
16M
Max.
100
0.4
10
20
—
1
3
Min.
2.4
—
—
—
—
—
—
—
—
—
pSRAM_Type07_13_A1 November 2, 2004
32M
N/A
Max.
0.4
1.5
10
40
50
80
30
10
—
3
Min.
2.4
—
—
—
—
—
—
—
—
—
64M
N/A
Max.
100
170
0.4
1.5
10
80
90
40
10
—
5
Unit
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
V
V