MT41J64M16JT-15E AIT:G Micron, MT41J64M16JT-15E AIT:G Datasheet - Page 198

• Manufacturer Part Number: MT41J64M16JT-15E AIT:G
• Description: DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 1.5V 96-Pin FBGA
• Manufacturer: Micron

Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse)
PDF: 09005aef84491df3
1Gb_AIT_AAT_DDR3_SDRAM.pdf – Rev. C 8/11 EN
If the time in the precharge power-down or idle states is very short (short CKE LOW
pulse), the power-down entry and power-down exit transition periods overlap. When
overlap occurs, the response of the DRAM’s R
synchronous or asynchronous from the start of the power-down entry transition period
to the end of the power-down exit transition period, even if the entry period ends later
than the exit period.
If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit
and power-down entry transition periods overlap. When this overlap occurs, the re-
sponse of the DRAM’s R
chronous from the start of power-down exit transition period to the end of the power-
down entry transition period.
Asynchronous to Synchronous ODT Mode Transition (Power-
TT
to a change in the ODT state may be synchronous or asyn-
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TT
to a change in the ODT state can be
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Down Exit)