MT41J64M16JT-15E AIT:G Micron, MT41J64M16JT-15E AIT:G Datasheet - Page 50

• Manufacturer Part Number: MT41J64M16JT-15E AIT:G
• Description: DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 1.5V 96-Pin FBGA
• Manufacturer: Micron

Figure 19: ODT Timing Reference Load
Table 31: ODT Timing Definitions
Table 32: Reference Settings for ODT Timing Measurements
PDF: 09005aef84491df3
1Gb_AIT_AAT_DDR3_SDRAM.pdf – Rev. C 8/11 EN
Symbol
t
Measured Parameter
t
AONPD
AOFPD
t
t
t
AON
AOF
ADC
t
t
AONPD
AOFPD
t
t
t
AON
AOF
ADC
Rising edge of CK - CK# defined by the end
point of ODTLon
Rising edge of CK - CK# defined by the end
point of ODTLoff
Rising edge of CK - CK# with ODT first being
registered HIGH
Rising edge of CK - CK# with ODT first being
registered LOW
Rising edge of CK - CK# defined by the end
point of ODTLcnw, ODTLcwn4, or ODTLcwn8
Begin Point Definition
Note:
CK, CK#
1. Assume an RZQ of 240 (±1%) and that proper ZQ calibration has been performed at a
R
stable temperature and voltage (V
TT,nom
RZQ/12 (20
RZQ/12 (20
RZQ/12 (20
RZQ/12 (20
RZQ/12 (20
RZQ/4 (60
RZQ/4 (60
RZQ/4 (60
RZQ/4 (60
DUT
TDQS, TDQS#
Setting
DQS, DQS#
ZQ
DQ, DM
V
REF
V
DDQ
RZQ = 240
R
Timing reference point
/2
TT
Extrapolated point at V
Extrapolated point at V
Extrapolated point at V
Extrapolated point at V
Extrapolated points at V
V
R
50
= 25
RTT,nom
TT(WR)
RZQ/2 (120
1Gb: x8, x16 Automotive DDR3 SDRAM
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
End Point Definition
Setting
DDQ
V
V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
TT
SSQ
= V
= V
SSQ
DD
, V
SSQ
SSQ
RTT,nom
SSQ
RTT,nom
RTT(WR)
= V
100mV
100mV
100mV
100mV
200mV
SS
50mV
50mV
50mV
50mV
V
).
and
SW1
ODT Characteristics
‹ 2010 Micron Technology, Inc. All rights reserved.
Figure 20 (page 51)
Figure 20 (page 51)
Figure 21 (page 51)
Figure 21 (page 51)
Figure 22 (page 52)
Figure
100mV
200mV
100mV
200mV
100mV
200mV
100mV
200mV
300mV
V
SW2