MC9S12P64VQK Freescale Semiconductor, MC9S12P64VQK Datasheet - Page 455

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MC9S12P64VQK

Manufacturer Part Number
MC9S12P64VQK
Description
16-bit Microcontrollers - MCU 16 BIT 64K FLASH
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MC9S12P64VQK

Rohs
yes
Core
S12
Processor Series
MC9S12P
Data Bus Width
16 bit
Maximum Clock Frequency
64 MHz
Program Memory Size
64 KB
Data Ram Size
4 KB
On-chip Adc
Yes
Operating Supply Voltage
5 V
Operating Temperature Range
- 40 C to 105 C
Package / Case
QFP-80
Mounting Style
SMD/SMT
Interface Type
I2C, SCI, SPI
Program Memory Type
Flash

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC9S12P64VQK
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
13.4.4
Only the operations marked ‘OK’ in
Flash and Data Flash blocks. Some operations cannot be executed simultaneously because certain
hardware resources are shared by the two memories. The priority has been placed on permitting Program
Flash reads while program and erase operations execute on the Data Flash, providing read (P-Flash) while
write (D-Flash) functionality.
13.4.5
This section provides details of all available Flash commands launched by a command write sequence. The
ACCERR bit in the FSTAT register will be set during the command write sequence if any of the following
illegal steps are performed, causing the command not to be processed by the Memory Controller:
Freescale Semiconductor
FCMD
0x10
0x11
0x12
Starting any command write sequence that programs or erases Flash memory before initializing the
FCLKDIV register
Writing an invalid command as part of the command write sequence
For additional possible errors, refer to the error handling table provided for each command
Allowed Simultaneous P-Flash and D-Flash Operations
Flash Command Description
Program D-Flash
Erase Verify D-
Erase D-Flash
Flash Section
Command
Sector
Table 13-30. Allowed P-Flash and D-Flash Simultaneous Operations
1. A ‘Margin Read’ is any read after executing the margin setting commands ‘Set
2. See the Note on margin settings in
3. The ‘Mass Erase’ operations are commands ‘Erase All Blocks’ and ‘Erase
Program Flash
Margin Read
Mass Erase
Sector Erase
User Margin Level’ or ‘Set Field Margin Level’ with anything but the ‘normal’
level specified.
Flash Block’
Program
Read
Verify that a given number of words starting at the address provided are erased.
Program up to four words in the D-Flash block.
Erase all bytes in a sector of the D-Flash block.
(3)
(1)
S12P-Family Reference Manual, Rev. 1.13
Table 13-29. D-Flash Commands
Table 13-30
Read
Margin
Read
OK
OK
are permitted to be run simultaneously on the Program
(2)
Section 13.4.5.12
1
Function on D-Flash Memory
Data Flash
Program
OK
and
Sector
Erase
128 KByte Flash Module (S12FTMRC128K1V1)
OK
OK
Section
13.4.5.13.
Erase
Mass
OK
3
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