S9S12G64F0CLFR Freescale Semiconductor, S9S12G64F0CLFR Datasheet - Page 1060
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S9S12G64F0CLFR
Manufacturer Part Number
S9S12G64F0CLFR
Description
16-bit Microcontrollers - MCU S12 Core,64K FLASH AU
Manufacturer
Freescale Semiconductor
Datasheet
1.S9S12G96F0CLL.pdf
(1292 pages)
Specifications of S9S12G64F0CLFR
Rohs
yes
Core
S12
Processor Series
MC9S12G
Data Bus Width
16 bit
Maximum Clock Frequency
1 MHz
Program Memory Size
64 KB
Data Ram Size
8 KB
On-chip Adc
Yes
Operating Supply Voltage
3.13 V to 5.5 V
Operating Temperature Range
- 40 C to + 125 C
Package / Case
LQFP-48
Mounting Style
SMD/SMT
A/d Bit Size
10 bit, 12 bit
A/d Channels Available
12
Interface Type
SPI
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Number Of Programmable I/os
40
Number Of Timers
8
Program Memory Type
Flash
Supply Voltage - Max
5.5 V
Supply Voltage - Min
3.13 V
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128 KByte Flash Module (S12FTMRG128K1V1)
29.4.3
IFR is an internal NVM resource readable by CPU , when NVMRES is active. The IFR fields are shown
in
The NVMRES global address map is shown in
29.4.4
Flash command operations are used to modify Flash memory contents.
The next sections describe:
29.4.4.1
Prior to issuing any Flash program or erase command after a reset, the user is required to write the
FCLKDIV register to divide BUSCLK down to a target FCLK of 1 MHz.
values for the FDIV field based on BUSCLK frequency.
When the FCLKDIV register is written, the FDIVLD bit is set automatically. If the FDIVLD bit is 0, the
FCLKDIV register has not been written since the last reset. If the FCLKDIV register has not been written,
any Flash program or erase command loaded during a command write sequence will not execute and the
ACCERR bit in the FSTAT register will set.
29.4.4.2
The Memory Controller will launch all valid Flash commands entered using a command write sequence.
Before launching a command, the ACCERR and FPVIOL bits in the FSTAT register must be clear (see
Section
sequence. If CCIF is 0, the previous command write sequence is still active, a new command write
sequence cannot be started, and all writes to the FCCOB register are ignored.
1062
Table
•
•
•
How to write the FCLKDIV register that is used to generate a time base (FCLK) derived from
BUSCLK for Flash program and erase command operations
The command write sequence used to set Flash command parameters and launch execution
Valid Flash commands available for execution, according to MCU functional mode and MCU
security state.
29.3.2.7) and the CCIF flag should be tested to determine the status of the current command write
29-5.
Internal NVM resource (NVMRES)
Flash Command Operations
Writing the FCLKDIV Register
Command Write Sequence
Programming or erasing the Flash memory cannot be performed if the bus
clock runs at less than 0.8 MHz. Setting FDIV too high can destroy the Flash
memory due to overstress. Setting FDIV too low can result in incomplete
programming or erasure of the Flash memory cells.
MC9S12G Family Reference Manual,
Table
NOTE
29-6.
Rev.1.23
Table 29-8
shows recommended
Freescale Semiconductor
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