ST92E163-EPB/US STMicroelectronics, ST92E163-EPB/US Datasheet - Page 207

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ST92E163-EPB/US

Manufacturer Part Number
ST92E163-EPB/US
Description
KIT DEMO MASS STORAGE
Manufacturer
STMicroelectronics
Type
Microcontroller Programmerr
Datasheet

Specifications of ST92E163-EPB/US

Contents
Programmer, Cable, Power Supply, Software, Manual and more
For Use With/related Products
ST9 MCUs
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0
INPUT/OUTPUT SPEED LIMITATIONS
Special care must be taken when using fast exter-
nal signalling with the ST92163 because the load
capacitance must be reduced to the minimum.
Therefore, it is recommended to use FAST mode
or external buffering to avoid speed problems.
The following table will help you to select either
FAST or SLOW mode depending on the speed re-
quired. For instance, if you need to use the SCI in
Note 1: SLOW mode and FAST mode are selected through the BSZ bit in the EMR1 register (described
in the External Memory Interface chapter: 0 = SLOW mode; 1 = FAST mode). It is important to note that
all I/Os will be impacted by the Slow or Fast Mode selection.
Input/Output Rising/Falling edges in SLOW MODE
Input/Output Rising/Falling edges in FAST MODE
Rising and falling edges
Rising and falling edges
Parameter
Parameter
C
C
Conditions
Conditions
Load
Load
= 50 pf
= 50 pf
1)
(OTP device)
(OTP device)
ST92163R4 - ELECTRICAL CHARACTERISTICS
1)
1)
T
T
V
V
A
A
DD
DD
= 20° C
= 20° C
35
14
= 5 V
= 5 V
Synchronous mode at 3 Mb/s, you must use FAST
mode or external buffering.
Since ROM devices are slightly slower than OTP
devices, to select between FAST or SLOW mode,
it is important to use the given values and not to
take into account the behaviour of a few samples.
Typ.
Typ.
(ROM device)
(ROM device)
T
T
V
V
A
A
DD
DD
= 20° C
= 20° C
50
14
= 5 V
= 5 V
(ROM & OTP)
(ROM & OTP)
V
V
T
T
DD
DD
A
A
Max.
Max.
= 70° C
= 70° C
100
= 4.0 V
= 4.0 V
30
207/230
Unit
Unit
ns
ns

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