ATTINY84V-10MU Atmel, ATTINY84V-10MU Datasheet - Page 171

• Manufacturer Part Number: ATTINY84V-10MU
• Description: IC MCU AVR 8K FLASH 10MHZ 20-QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY84V-10MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 12
• Program Memory Size: 8KB (4K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-MLF®, QFN
• Processor Series: ATTINY8x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI
• Maximum Clock Frequency: 10 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• For Use With: ATSTK600 - DEV KIT FOR AVR/AVR32770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRISP2 - PROGRAMMER AVR IN SYSTEM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

19.7.6
19.7.7
19.7.8
19.7.9
19.7.10
Table 19-16. High-voltage Serial Programming Instruction Set for ATtiny24/44/84
8006K–AVR–10/10
Instruction
Chip Erase
Load “Write
Flash”
Command
Load Flash
Page Buffer
Load Flash
High Address
and Program
Page
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Reading the Signature Bytes and Calibration Byte
Power-off sequence
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
0_1000_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0001_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_ bbbb_bbbb _00
0_0000_1100_00
x_xxxx_xxxx_xx
0_dddd_dddd_00
0_0011_1100_00
x_xxxx_xxxx_xx
0_0000_000a_00
0_0001_1100_00
x_xxxx_xxxx_xx
The algorithm for reading the Flash memory is as follows (refer to
The algorithm for reading the EEPROM memory is as follows (refer to
171):
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown in
Table 19-16 on page
The algorithms for reading the Signature bytes and Calibration byte are shown in
page
Set SCI to “0”. Set RESET to “1”. Turn V
Instr.1/5
1. Load Command "Read Flash".
2. Read Flash Low and High Bytes. The contents at the selected address are available at
1. Load Command “Read EEPROM”.
2. Read EEPROM Byte. The contents at the selected address are available at serial out-
serial output SDO.
put SDO.
171.
0_0000_0000_00
0_0110_0100_00
x_xxxx_xxxx_xx
0_eeee_eeee_00
0_0010_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1101_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_0100_00
x_xxxx_xxxx_xx
Instr.2/6
171.
Instruction Format
0_0000_0000_00
0_0110_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1101_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
x_xxxx_xxxx_xx
Instr.3/7
CC
power off.
0_0000_0000_00
0_0110_1100_00
x_xxxx_xxxx_xx
Instr.4
Table 19-16 on page
ATtiny24/44/84
Operation Remarks
Wait after Instr.3 until SDO
goes high for the Chip Erase
cycle to finish.
Enter Flash Programming code.
Repeat after Instr. 1 - 7until the
entire page buffer is filled or
until all data within the page is
filled.
Wait after Instr 3 until SDO
goes high. Repeat Instr. 2 - 3
for each loaded Flash Page
until the entire Flash or all data
is programmed. Repeat Instr. 1
for a new 256 byte page.
Instr 5-7.
(2)
Table 19-16 on page
Table 19-16 on
171):
(2)
171