HD64F3644DV Renesas Electronics America, HD64F3644DV Datasheet - Page 131

IC H8/3644 MCU FLASH 64QFP

HD64F3644DV

Manufacturer Part Number
HD64F3644DV
Description
IC H8/3644 MCU FLASH 64QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Lr
Datasheet

Specifications of HD64F3644DV

Core Processor
H8/300L
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI
Peripherals
PWM, WDT
Number Of I /o
53
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3644DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Figure 6.4 shows a PROM write/verify timing diagram.
6.3.2
Note: * t
Address
Data
V
V
CE
OE
Use the specified programming voltage and timing.
The programming voltage in PROM mode (V
permanently damage the chip. Be especially careful with respect to PROM programmer
overshoot.
Setting the PROM programmer to Renesas Technology specifications for the HN27C256 will
result in correct V
Make sure the index marks on the PROM programmer socket, socket adapter, and chip are
properly aligned. If they are not, the chip may be destroyed by excessive current flow. Before
programming, be sure that the chip is properly mounted in the PROM programmer.
PP
CC
Flow Chart.
OPW
V
V
V
V
Programming Precautions
PP
CC
CC
CC
+1
is defined by the value given in figure 6.3, High-Speed, High-Reliability Programming
t
t
t
t
VPS
VCS
AS
DS
PP
of 12.5 V.
Input data
Figure 6.4 PROM Write/Verify Timing
t
OPW
t
PW
*
Write
t
DH
PP
) is 12.5 V. Use of a higher voltage can
t
OES
Rev. 6.00 Sep 12, 2006 page 109 of 526
t
OE
Verify
Output data
REJ09B0326-0600
Section 6 ROM
t
t
AH
DF

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