HD64F3644DV Renesas Electronics America, HD64F3644DV Datasheet - Page 148

• Manufacturer Part Number: HD64F3644DV
• Description: IC H8/3644 MCU FLASH 64QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Lr

Specifications of HD64F3644DV

• Core Processor: H8/300L
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 ROM
User Program Mode Execution Procedure *
RAM is shown below.
Rev. 6.00 Sep 12, 2006 page 126 of 526
REJ09B0326-0600
Notes: 1. Do not apply 12 V to the FV
1
2
3
4
5
6
7
8
reprogramming routine in RAM area
reprogramming routine in RAM area
Branch to flash memory application
Branch to flash memory on-board
2. When the application of 12 V to the FV
reprogramming routine to RAM
(flash memory reprogramming)
erasing due to program runaway, etc., apply 12 V to the FV
being programmed or erased . Memory cells may not operate normally if overprogrammed or
overerased due to program runaway, etc. Also, while 12 V is applied to the FV
timer should be activated to prevent overprogramming or overerasing due to program runaway, etc.
For further information on FV
Memory Programming and Erasing Precautions.
memory read setup time (t
specifies the setup time from the point at which the FV
12 V application is released until the flash memory is read.
Reset-start (TEST = V
(exit user program mode)
reprogramming program
Branch to flash memory
Transfer flash memory
Execute flash memory
(user program mode)
Release FV
FV
program
PP
Figure 6.12 Example of User Program Mode Operation
= 12 V
*2
PP
SS
)
FRS
PP
PP
) must elapse before executing a program in flash memory. This
pin during normal operation. To prevent inadvertent programming or
application, release, and cut-off, see note 5 in section 6.9, Flash
Procedure:
An on-board reprogramming program must be written into
flash memory by the user beforehand.
1. Set the TEST pin to V
2. Branch to the on-board reprogramming program written to
3. Transfer the flash memory reprogramming routine to the
4. Branch to the flash memory reprogramming routine
5. Apply 12 V to the FV
6. Execute the flash memory reprogramming routine in the
7. Switch the FV
8. After on-board reprogramming of the flash memory ends,
PP
1
flash memory.
RAM area.
transferred to the RAM area.
mode)
RAM area, an perform on-board reprogramming of the
flash memory.
program mode.
branch to the flash memory application program.
pin is released after programming is completed, the flash
: The procedure for user program execution in
PP
PP
voltage reaches the V
pin from 12 V to V
PP
PP
pin only when the flash memory is
SS
pin. (Transition to user program
and execute a reset-start.
CC
PP
, and exit user
CC
pin, the watchdog
+ 2 V level after