HD64F3644DV Renesas Electronics America, HD64F3644DV Datasheet - Page 182

IC H8/3644 MCU FLASH 64QFP

HD64F3644DV

Manufacturer Part Number
HD64F3644DV
Description
IC H8/3644 MCU FLASH 64QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Lr
Datasheet

Specifications of HD64F3644DV

Core Processor
H8/300L
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI
Peripherals
PWM, WDT
Number Of I /o
53
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3644DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 ROM
6.9
Precautions concerning the use of on-board programming modes and PROM mode are
summarized below.
1. Program with the specified voltages and timing.
2. Before programming, check that the chip is correctly mounted in the PROM programmer.
3. Do not touch the socket adapter or chip while programming. Touching either of these can
4. Set H'FF as the PROM programmer buffer data for the following addresses:
5. Precautions in applying, releasing, and cutting *
Rev. 6.00 Sep 12, 2006 page 160 of 526
REJ09B0326-0600
The rated programming voltage (V
If the PROM programmer is set to Renesas HN28F101 specifications, V
Applied voltages in excess of the rating can permanently damage the device. In particular,
insure that the peak overshoot of the PROM programmer does not exceed the maximum rating
of 13 V.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
cause contact faults and write errors.
H8/3644F: H'8000 to H'1FFFF
H8/3643F: H'6000 to H'1FFFF
H8/3642AF: H'4000 to H'1FFFF
The size of the PROM area is 32 kbytes in the H8/3644F, 24 kbytes in the H8/3643F, and 16
kbytes in the H8/3642AF. The addresses shown above always read H'FF, so if H'FF is not
specified as programmer data, a block error will occur.
a. Apply the programming voltage (V
cutting V
To avoid programming or erasing flash memory by mistake, V
released, and cut when the MCU is in a “stable operating condition” as described below.
MCU stable operating condition
Flash Memory Programming and Erasing Precautions
The V
If the V
range (V
programmed or erased by mistake. This can occur even if V
supply measures should be taken, such as the insertion of a bypass capacitor, to prevent
fluctuation of the V
CC
CC
PP
.
CC
voltage must be within the rated voltage range (V
voltage is applied, released, or cut while V
= 2.7 V to 5.5 V), since the MCU is unstable, the flash memory may be
CC
power supply when V
PP
) of the flash memory is 12.0 V.
PP
) after V
1
the programming voltage (V
CC
PP
has stabilized, and release V
is applied.
CC
is not within its rated voltage
CC
PP
CC
should only be applied,
= 2.7 V to 5.5 V).
= 0 V. Adequate power
PP
will be 12.0 V.
PP
)
PP
before

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