ADC1210S065HN/C1:5 NXP Semiconductors, ADC1210S065HN/C1:5 Datasheet - Page 33

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ADC1210S065HN/C1:5

Manufacturer Part Number
ADC1210S065HN/C1:5
Description
ADC1210S065HN/HVQFN40/REEL13DP
Manufacturer
NXP Semiconductors
Datasheet

Specifications of ADC1210S065HN/C1:5

Number Of Bits
12
Sampling Rate (per Second)
65M
Data Interface
Serial, SPI™
Number Of Converters
1
Voltage Supply Source
Analog and Digital
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
40-VFQFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935289036518
ADC1210S065HN,518
ADC1210S065HN,518
NXP Semiconductors
Table 27.
Default values are highlighted.
Table 28.
Default values are highlighted.
Table 29.
Default values are highlighted.
Table 30.
Default values are highlighted.
ADC1210S_SER
Product data sheet
Bit
7 to 0
Bit
7 to 4
3 to 0
Bit
7 to 4
3
2 to 0
Bit
7 to 4
3 to 2
1 to 0
Symbol
-
FASTOTR
FASTOTR_DET[2:0]
Symbol
-
DAV_DRV[1:0]
DATA_DRV[1:0]
Symbol
TESTPAT_USER[11:4]
Symbol
TESTPAT_USER[3:0]
-
Test pattern register 2 (address 0015h) bit description
Test pattern register 3 (address 0016h) bit description
Fast OTR register (address 0017h) bit description
CMOS output register (address 0020h) bit description
Access
R/W
R/W
Access
R/W
R/W
Access
R/W
Access
R/W
All information provided in this document is subject to legal disclaimers.
Value
0000
00
01
10
11
00
01
10
11
Rev. 2 — 23 December 2010
Value
0000
0
1
000
001
010
011
100
101
110
111
Value
0000
0000
Value
00000000 custom digital test pattern (bits 11 to 4)
Description
not used
drive strength for DAV CMOS output buffer
drive strength for DATA CMOS output buffer
Single 12-bit ADC; CMOS or LVDS DDR digital outputs
low
medium
high
very high
low
medium
high
very high
Description
not used
fast OuT-of-Range (OTR) detection
set fast OTR detect level
not used
Description
custom digital test pattern (bits 3 to 0)
Description
disabled
enabled
20.56 dB
16.12 dB
11.02 dB
7.82 dB
5.49 dB
3.66 dB
2.14 dB
0.86 dB
ADC1210S series
© NXP B.V. 2010. All rights reserved.
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