MK60DX256ZVLL10 Freescale Semiconductor, MK60DX256ZVLL10 Datasheet - Page 36

• Manufacturer Part Number: MK60DX256ZVLL10
• Description: KINETIS 256KFLEX ENET
• Manufacturer: Freescale Semiconductor

Specifications of MK60DX256ZVLL10

• Processor Series: K60
• Core: ARM Cortex M4
• Data Bus Width: 16 bit
• Program Memory Type: Flash
• Program Memory Size: 256 KB
• Data Ram Size: 128 KB
• Interface Type: USB, CAN, SPI, I2C, UART
• Maximum Clock Frequency: 100 MHz
• Number Of Programmable I/os: 2
• Number Of Timers: 2
• Operating Supply Voltage: 1.71 V to 3.6 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Package / Case: LQFP-100
• Operating Temperature Range: - 40 C to + 105 C
• Processor To Be Evaluated: MK60DX256ZVLL10
• Supply Current (max): 185 mA
• Lead Free Status / Rohs Status: Details

Peripheral operating requirements and behaviors
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
6.4.1.4 Reliability specifications
36
t
t
t
t
t
t
t
t
eewr16b128k
eewr16b256k
t
eewr32b128k
eewr32b256k
t
t
t
t
eewr16b32k
eewr16b64k
eewr32b32k
eewr32b64k
t
t
eewr32bers
nvmretp10k
nvmretp100
nvmretd10k
nvmretd100
n
Symbol
Symbol
nvmretp1k
nvmretd1k
nvmcycp
I
Symbol
DD_PGM
Word-write to FlexRAM execution time:
Longword-write to erased FlexRAM location
execution time
Longword-write to FlexRAM execution time:
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Description
Description
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
Table 21. Flash command timing specifications (continued)
Worst case programming current in program flash
Description
Table 22. Flash (FTFL) current and power specfications
K60 Sub-Family Data Sheet Data Sheet, Rev. 5, 5/2011.
Table 23. NVM reliability specifications
Longword-write to FlexRAM for EEPROM operation
Table continues on the next page...
Program Flash
Preliminary
Data Flash
10 K
Min.
Min.
10
15
10
15
—
—
—
—
—
—
—
—
—
5
5
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
200
1
Max.
TBD
TBD
TBD
TBD
TBD
Max.
Typ.
1.5
2.5
2.7
3.7
10
—
—
—
—
—
—
—
Freescale Semiconductor, Inc.
cycles
years
years
years
years
years
years
Unit
Unit
ms
ms
ms
ms
ms
ms
ms
ms
μs
Unit
mA
Notes
Notes
2
2
2
3
2
2
2