GE28F320C3BD70 Intel, GE28F320C3BD70 Datasheet - Page 10

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GE28F320C3BD70

Manufacturer Part Number
GE28F320C3BD70
Description
Manufacturer
Intel
Datasheet

Specifications of GE28F320C3BD70

Density
32Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
21b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
2M
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
2.2
Figure 1:
2.3
Datasheet
10
A[MAX:MIN]
C3 Flash Memory Device Block Diagram
Input Buffer
V
CCQ
Address
Address
Counter
Block Diagram
Memory Map
The C3 Discrete device is asymmetrically blocked, which enables system code and data
integration within a single flash device. The bulk of the array is divided into 32 Kword
main blocks that can store code or data, and 4 Kword boot blocks to facilitate storage
of boot code or for frequently changing small parameters. See
Memory Map” on page 11
details.
Latch
Y-Decoder
X-Decoder
Reduction
Control
Power
Output Buffer
and
Table 2, “Bottom Boot Memory Map” on page 12
Y-Gating/Sensing
Comparator
DQ
Identifier
Register
Register
Status
Data
0
-DQ
15
Input Buffer
Command
Write State
Interface
Machine
User
Table 1, “Top Boot
I/O Logic
Program/Erase
Voltage Switch
C3 Discrete
March 2008
290645-24
for
CE#
WE#
OE#
RP#
WP#
GND
V
CC
V
PP

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