GE28F320C3BD70 Intel, GE28F320C3BD70 Datasheet - Page 23

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GE28F320C3BD70

Manufacturer Part Number
GE28F320C3BD70
Description
Manufacturer
Intel
Datasheet

Specifications of GE28F320C3BD70

Density
32Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
21b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
2M
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
C3 Discrete
6.0
6.1
Table 7:
March 2008
290645-24
I
I
Sym
I
I
I
I
CCES
I
I
CCWS
I
I
CCW
CCD
I
CCS
CCR
PPD
CCE
PPR
LO
LI
/
Input Load Current
Output Leakage
Current
V
for 0.13 and 0.18
Micron Product
V
for 0.25 Micron
Product
V
Current for 0.13 and
0.18 Micron Product
V
Current for 0.25
Product
V
0.13 and 0.18 Micron
Product
V
0.25 Micron Product
V
Current
V
V
V
Current for 0.13 and
0.18 Micron Product
V
Current for 0.25
Micron Product
V
CC
CC
CC
CC
CC
CC
PP
CC
CC
CC
CC
PP
Deep Power-Down
Read Current
Standby Current
Standby Current
Power-Down
Power-Down
Read Current for
Read Current for
Program Current
Erase Current
Erase Suspend
Erase Suspend
DC Current Characteristics (Sheet 1 of 2)
Parameter
Electrical Specifications
Current Characteristics
Note
1,2,3
1,2,3
1,4,5
V
V
1,2
1,2
1,2
1,2
1,4
1,4
1,4
CCQ
1
1
1
CC
Typ
2.7 V–3.6
2.7 V–3.6
0.2
10
10
18
16
10
50
7
7
7
9
8
8
7
2
V
V
Max
± 10
±15
200
± 1
15
25
15
25
18
18
55
22
45
15
15
25
5
2.7 V–2.85 V
1.65 V–2.5 V
Typ
0.2
20
20
18
10
21
16
50
50
50
7
7
8
8
2
Max
± 10
200
200
±15
200
± 1
50
50
20
25
15
15
55
30
45
45
5
2.7 V–3.3 V
1.8 V–2.5 V
Typ
150
150
0.2
18
10
21
16
50
50
50
7
7
9
9
2
Max
± 10
200
250
250
200
±15
200
± 1
15
20
25
15
55
30
45
45
5
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
CE# = RP# = V
or during Program/ Erase
Suspend
WP# = V
V
V
V
RP# = GND ± 0.2 V
V
V
OE# = V
f = 5 MHz, I
Inputs = V
RP# = GND ± 0.2 V
V
V
Program in Progress
V
Program in Progress
V
Erase in Progress
V
Erase in Progress
CE# = V
Progress
V
V
CC
CCQ
IN
CC
CCQ
IN
CC
CC
CCQ
IN
CC
CCQ
PP
PP
PP
PP
PP
PP
PP
≤ V
= V
≤ V
> V
= V
= V
= V
=V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
Test Conditions
PP1,
CC
CC
CCQ
CCQ
CCQ
PP2 (12v)
CC
PP1,
PP2 (12v) ,
CC
CC
CC
CC
CC
IH,
IH
CCQ
CCQ
CCQ
CCQ
CCQ
Max
Max
Max
Max
Max
, CE# =V
IL
Erase Suspend in
or GND
or GND
or GND
OUT
Max
Max
Max
Max
or V
or GND
=0 mA
CCQ
IH
IL
Datasheet
23

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