st10f272z2 STMicroelectronics, st10f272z2 Datasheet - Page 144

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st10f272z2

Manufacturer Part Number
st10f272z2
Description
16-bit Mcu With 256 Kbyte Flash Memory And 20 Kbyte Ram
Manufacturer
STMicroelectronics
Datasheet

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0
Electrical characteristics
25.6
Table 66.
1. The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2. Word and Double Word Programming times are provided as average values derived from a full sector programming time:
3. Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the Bank). As
4. Not 100% tested, guaranteed by Design Characterization.
144/189
Word Program (32-bit)
Double Word Program (64-bit)
Bank 0 Program (256K)
(Double Word Program)
Sector Erase (8K)
Sector Erase (32K)
Sector Erase (64K)
Bank 0 Erase (256K)
Recovery from Power-Down (t
Program Suspend Latency
Erase Suspend Latency
Erase Suspend Request Rate
Set Protection
absolute value of a Word or Double Word Programming time could be longer than the average value.
ST10F272Z2 implements only one bank, the Bank Erase operation is equivalent to Module and Chip Erase operations.
Parameter
Flash characteristics
Flash characteristics
V
(4)
DD
= 5 V ± 10%, V
(3)
(2)
(4)
(4)
(2))
PD
(4)
)
SS
0 cycles
T
= 0 V
Typical
A
= 25°C
1.6
0.6
0.5
1.1
0.8
1.7
1.3
5.6
4.0
35
60
20
40
(1)
0 cycles
13.6
11.9
150
2.0
0.9
0.8
2.0
1.8
3.7
3.3
80
40
10
30
20
90
T
Maximum
A
(1)
= 125°C
100k cycles
19.2
17.5
290
570
300
3.9
1.0
0.9
2.7
2.5
5.1
4.7
20
40
10
30
Unit
ms
µs
µs
µs
µs
µs
µs
s
s
s
s
s
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
(4)
Min delay between 2
requests
Notes
ST10F272Z2

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