MC9S08JM16CGTE FREESCALE [Freescale Semiconductor, Inc], MC9S08JM16CGTE Datasheet - Page 369

• Manufacturer Part Number: MC9S08JM16CGTE
• Description: Microcontrollers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations.
A.14 USB Electricals
The USB electricals for the S08USBV1 module conform to the standards documented by the Universal
Serial Bus Implementers Forum. For the most up-to-date standards, visit http://www.usb.org.
Freescale Semiconductor
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for Flash is based on the intrinsic bitcell performance. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25 °C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
1
2
3
4
5
6
7
8
9
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 85°C
Characteristic
5
3
2
MC9S08JM16 Series Data Sheet, Rev. 2
Table A-15. Flash Characteristics
2
4
(2)
(2)
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
15
—
5
20,000
Typical
Appendix A Electrical Characteristics
4000
100,000
9
4
100
—
1
Max
6.67
200
5.5
5.5
—
—
—
cycles
DD
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.
369