S29GL256P10FFI022 Spansion, S29GL256P10FFI022 Datasheet - Page 19

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S29GL256P10FFI022

Manufacturer Part Number
S29GL256P10FFI022
Description
Flash 256M, 3V, 110ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256P10FFI022

Rohs
yes
Data Bus Width
16 bit
Memory Type
NOR Flash
Memory Size
256 Mbit
Architecture
Uniform
Timing Type
Asynchronous
Interface Type
CFI
Access Time
100 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
110 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
FBGA-64
Organization
128 KB x 1024
7. Device Operations
7.1
Legend
L = Logic Low = V
Notes
1. Addresses are AMax:A0 in word mode; A
2. If WP# = V
3. D
October 22, 2012 S29GL-P_00_A14
Operation
Read
Write (Program/Erase)
Accelerated Program
Standby
Output Disable
Reset
WP# is at V
IN
or D
OUT
Device Operation Table
IL
IH
, on the outermost sector remains protected. If WP# = V
as required by command sequence, data polling, or sector protect algorithm.
. All sectors are unprotected when shipped from the factory (The Secured Silicon Sector can be factory protected depending on version ordered.)
IL
, H = Logic High = V
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA001-SA510) have sector starting and ending addresses that form the same pattern as all other
sectors of that size. For example, all 128 Kb sectors have the pattern xxx0000h-xxxFFFFh.
This section describes the read, program, erase, handshaking, and reset features of the Flash devices.
Operations are initiated by writing specific commands or a sequence with specific address and data patterns
into the command registers (see
occupy any addressable memory location; rather, it is composed of latches that store the commands, along
with the address and data information needed to execute the command. The contents of the register serve as
input to the internal state machine and the state machine outputs dictate the function of the device. Writing
incorrect address and data values or writing them in an improper sequence may place the device in an
unknown state, in which case the system must pull the RESET# pin low or power cycle the device to return
the device to the reading array data mode.
The device must be setup appropriately for each operation.
control pin for any particular operation.
Uniform Sector
64 Kword/
128 Kbyte
V
CC
Size
CE#
±
L
L
L
L
X
0.3 V
IH
, V
HH
Max
OE#
= 11.5–12.5V, X = Don’t Care, A
:A-1 in byte mode.
H
H
X
H
X
L
Sector
Count
128
D a t a
WE#
Table 6.4 S29GL128P Sector & Memory Address Map
H
X
H
X
L
L
S29GL-P MirrorBit
Table 7.1 Device Operations
V
Table 12.1
CC
RESET#
S h e e t
Sector
Range
SA127
SA00
±
H
H
H
H
L
IH
:
0.3 V
, the outermost sector is unprotected. WP# has an internal pull-up; when unconnected,
IN
through
WP#/ACC
= Address In, D
(Note 2)
®
V
Flash Family
X
H
X
X
HH
Address Range (16-bit)
Table
0000000h - 000FFFFh
07F0000 - 7FFFFF
Addresses
IN
12.4). The command register itself does not
(Note 1)
Table 7.1
= Data In, D
A
A
A
X
X
X
IN
IN
IN
:
OUT
describes the required state of each
DQ0–DQ7
(Note 3)
(Note 3)
High-Z
High-Z
High-Z
= Data Out
D
OUT
BYTE#= V
Sector Starting Address
(Note 3)
(Note 3)
Sector Ending Address
High-Z
High-Z
High-Z
D
OUT
DQ8–DQ15
IH
Notes
BYTE#= V
DQ15 = A-1
DQ8–DQ14
= High-Z,
High-Z
High-Z
High-Z
IL
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