S29GL256P10FFI022 Spansion, S29GL256P10FFI022 Datasheet - Page 24

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S29GL256P10FFI022

Manufacturer Part Number
S29GL256P10FFI022
Description
Flash 256M, 3V, 110ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256P10FFI022

Rohs
yes
Data Bus Width
16 bit
Memory Type
NOR Flash
Memory Size
256 Mbit
Architecture
Uniform
Timing Type
Asynchronous
Interface Type
CFI
Access Time
100 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
110 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
FBGA-64
Organization
128 KB x 1024
7.7
24
7.7.1
Program/Erase Operations
Single Word Programming
These devices are capable of several modes of programming and or erase operations which are described in
detail in the following sections.
During a write operation, the system must drive CE# and WE# to V
command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is latched on
the 1st rising edge of WE# or CE#.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without
first writing unlock cycles within the command sequence. See
function.
Note the following:
 When the Embedded Program algorithm is complete, the device returns to the read mode.
 The system can determine the status of the program operation by reading the DQ status bits. Refer to the
 An “0” cannot be programmed back to a “1.” A succeeding read shows that the data is still “0.”
 Only erase operations can convert a “0” to a “1.”
 Any commands written to the device during the Embedded Program/Erase are ignored except the
 Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in
 A hardware reset and/or power removal immediately terminates the Program/Erase operation and the
 Programming is allowed in any sequence and across sector boundaries for single word programming
 Programming to the same word address multiple times without intervening erases is permitted.
Single word programming mode is one method of programming the Flash. In this mode, four Flash command
write cycles are used to program an individual Flash address. The data for this programming operation could
be 8 or 16-bits wide.
While the single word programming method is supported by most Spansion devices, in general Single Word
Programming is not recommended for devices that support Write Buffer Programming. See
on page 69
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by reading
the DQ status bits. Refer to Write Operation Status
 During programming, any command (except the Suspend Program command) is ignored.
 The Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in
 A hardware reset immediately terminates the program operation. The program command sequence should
 Programming to the same address multiple times continuously (for example, “walking” a bit within a word)
Write Operation Status
Suspend commands.
progress.
Program/Erase command sequence should be reinitiated once the device has returned to the read mode
to ensure data integrity.
operation. See Write Buffer Programming
progress.
be reinitiated once the device has returned to the read mode, to ensure data integrity.
is permitted.
for the required bus cycles and
on page 36
S29GL-P MirrorBit
for information on these status bits.
Figure 7.1
D a t a
on page 26
®
Flash Family
on page 36
for the flowchart.
S h e e t
when using the write buffer.
Section 7.7.8
for information on these status bits.
IL
and OE# to V
S29GL-P_00_A14 October 22, 2012
for details on the Unlock Bypass
IH
when providing address,
Table 12.1

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