S29GL256P10FFI022 Spansion, S29GL256P10FFI022 Datasheet - Page 63

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S29GL256P10FFI022

Manufacturer Part Number
S29GL256P10FFI022
Description
Flash 256M, 3V, 110ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256P10FFI022

Rohs
yes
Data Bus Width
16 bit
Memory Type
NOR Flash
Memory Size
256 Mbit
Architecture
Uniform
Timing Type
Asynchronous
Interface Type
CFI
Access Time
100 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
110 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
FBGA-64
Organization
128 KB x 1024
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status
2. These waveforms are for the word mode
Notes
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
2. t
3. CE# does not need to go high between status bit reads
October 22, 2012 S29GL-P_00_A14
Addresses
OE
Addresses
DQ6–DQ0
RY/BY#
for data polling is 45 ns when V
RY/BY#
WE#
DQ7
OE#
CE#
WE#
Data
CE#
OE#
V
CC
t
VCS
t
t
BUSY
CH
t
OEH
t
Erase Command Sequence (last two cycles)
CS
2AAh
Figure 11.12 Data# Polling Timings (During Embedded Algorithms)
t
IO
WC
t
= 1.65 to 2.7 V and is 35 ns when V
ACC
t
CE
t
t
VA
t
WP
t
RC
OE
DS
Figure 11.11 Chip/Sector Erase Operation Timings
55h
t
t
DH
CH
Complement
Status Data
D a t a
555h for chip erase
t
S29GL-P MirrorBit
WPH
t
OH
t
DF
t
AS
S h e e t
SA
10 for Chip Erase
IO
= 2.7 to 3.6 V
t
AH
®
VA
30h
Complement
Flash Family
Status Data
t
BUSY
True
True
t
on page
WHWH2
Read Status Data
VA
36.)
Progress
VA
In
Valid Data
Valid Data
VA
Complete
t
RB
High Z
High Z
63

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