S29GL256P10FFI022 Spansion, S29GL256P10FFI022 Datasheet - Page 3

• Manufacturer Part Number: S29GL256P10FFI022
• Description: Flash 256M, 3V, 110ns Parallel NOR Flash
• Manufacturer: Spansion

Specifications of S29GL256P10FFI022

• Rohs: yes
• Data Bus Width: 16 bit
• Memory Type: NOR Flash
• Memory Size: 256 Mbit
• Architecture: Uniform
• Timing Type: Asynchronous
• Interface Type: CFI
• Access Time: 100 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 110 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-64
• Organization: 128 KB x 1024

General Description
Distinctive Characteristics
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient pro-
duction volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid com-
binations offered may occur.
The Spansion S29GL01G/512/256/128P are Mirrorbit
offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer
that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time
than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher
density, better performance and lower power consumption.
 Single 3V read/program/erase (2.7-3.6 V)
 Enhanced VersatileI/O™ control
 90 nm MirrorBit process technology
 8-word/16-byte page read buffer
 32-word/64-byte write buffer reduces overall programming
 Secured Silicon Sector region
 Uniform 64 Kword/128 Kbyte Sector Architecture
 100,000 erase cycles per sector typical
 20-year data retention typical
S29GL-P MirrorBit
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit
3.0 Volt-only Page Mode Flash Memory featuring
90 nm MirrorBit Process Technology
Data Sheet
– All input levels (address, control, and DQ input levels) and outputs
time for multiple-word updates
– 128-word/256-byte sector for permanent, secure identification
– Can be programmed and locked at the factory or by the customer
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
are determined by voltage on V
through an 8-word/16-byte random Electronic Serial Number
Publication Number S29GL-P_00
IO
input. V
IO
range is 1.65 to V
®
Flash Family
Revision A
®
Flash products fabricated on 90 nm process technology. These devices
CC
 Offered Packages
 Suspend and Resume commands for Program and Erase
 Write operation status bits indicate program and erase
 Unlock Bypass Program command to reduce programming
 Support for CFI (Common Flash Interface)
 Persistent and Password methods of Advanced Sector
 WP#/ACC input
 Hardware reset input (RESET#) resets device
 Ready/Busy# output (RY/BY#) detects program or erase
Amendment 14
– 56-pin TSOP
– 64-ball Fortified BGA
operations
operation completion
time
Protection
– Accelerates programming time (when V
– Protects first or last sector regardless of sector protection settings
cycle completion
throughput during system production
Issue Date October 22, 2012
HH
is applied) for greater